BTS 3104SDR Infineon Technologies, BTS 3104SDR Datasheet - Page 18

• Manufacturer Part Number: BTS 3104SDR
• Manufacturer: Infineon Technologies

Specifications of BTS 3104SDR

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 2.0 A
• Rds (on) (max): 104.0 mOhm
• Id(lim) (min): 6.0 A

For maximum single avalanche energy please also refer to E
Figure 15
6.3
The condition short circuit is an overload condition of the device. If the current reaches the limitation value of
the device limits the current and starts heating up. When the thermal shutdown temperature is reached, the device
turns off.
The time from the beginning of current limitation until the over temperature switch off depends strongly on the
cooling conditions.
The device sinks higher current on IN pin during the protective switch off and switches back ON after the
BTS3104SDR cools down below the temperature hysteresis .
Figure 16
Datasheet
100,00
10,00
1,00
shows this behavior.
1
Maximum load inductance for single pulse
L=
Short Circuit Protection
f
(I
L
), T
j(start)
= 150 °C, V
bat
= 24V
18
I
D
AS
[ A ]
Max.
value in
“Energies” on Page 7
Smart low side power switch
HITFET - BTS3104SDR
Protection Functions
Rev. 1.0, 2009-12-06
V
EAS_3104.emf
bat
= 24V
I
D(lim)
10