BSP316P Infineon Technologies, BSP316P Datasheet
BSP316P
Specifications of BSP316P
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BSP316P Summary of contents
Page 1
... I D puls dv/dt =150°C jmax Page 1 Product Summary DS(on PG-SOT223-4-1 Drain pin 2/4 Gate pin1 Source pin 3 Marking Packaging BSP316P Non dry Value -0.68 -0.54 -2.72 6 ±20 GS 1.8 tot T -55... +150 stg 55/150/56 Class 1a BSP316P -100 V 1.8 -0.68 A Unit A kV/µ °C 2008-03-27 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.7 Symbol R thJS R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) Page 2 BSP316P Values Unit min. typ. max K 115 - 48 70 Values Unit min. typ. max. -100 - - ...
Page 3
... Q V =-80V, I =-0.68A -10V GS V (plateau) V =-80V, I =-0.68A =25° =0, I =-0.68A =-50V /dt=100A/µ Page 3 BSP316P Values Unit min. typ. max. 0 117 146 pF - 27 7.5 11.2 - 67.4 101 - 25.9 38.9 - -0.2 -0 -1.87 -2.8 - -5.1 -6 ...
Page 4
... - Page 4 | 10V GS BSP 316 P A -0.6 -0.5 -0.4 -0.3 -0.2 -0 100 = BSP 316 single pulse - BSP316P 120 °C 160 0.50 0.20 0.10 0.05 0.02 0. 2008-03-27 ...
Page 5
... A 2.5 2 1 0.5 1 1.5 2 2.5 Rev.1.7 6 Typ. drain-source on resistance R DS(on) parameter =25° 3 Typ. forward transconductance | f(I DS(on)max fs parameter =25°C 3 3 Page 0.4 0.8 1.2 1 1.8 S 1.2 0.9 0.6 0 0.4 0.8 1.2 1.6 2 BSP316P 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V A 2 2 2008-03-27 ...
Page 6
... Page 2.4 V 98% 2 1.8 typ. 1.6 1.4 1 0.8 0.6 0.4 0.2 0 -60 - BSP 316 °C typ 150 °C typ °C (98 150 °C (98 -0.4 -0.8 -1.2 -1.6 -2 BSP316P 100 °C 160 2008-03-27 ...
Page 7
... max 0 max -2 0 max Rev.1.7 14 Drain-source breakdown voltage V (BR)DSS = 25 °C j -120 V -114 -112 -110 -108 -106 -104 -102 -100 -98 -96 -94 - Page 7 BSP316P = BSP 316 P -60 - 100 2008-03-27 °C 180 T j ...
Page 8
... Rev.1.7 Page 8 BSP316P 2008-03-27 ...