IRFSL52N15D International Rectifier Corp., IRFSL52N15D Datasheet
IRFSL52N15D
Available stocks
Related parts for IRFSL52N15D
IRFSL52N15D Summary of contents
Page 1
... Typ. ––– 0.50 ––– ––– 94357A IRFB52N15D IRFS52N15D IRFSL52N15D ® Power MOSFET R max I DS(on) D 0.032 60A 2 D Pak TO-262 IRFS52N15D IRFSL52N15D Max. Units 240 3.8 W 320 2.1 W/°C ± 5.5 V/ns °C Max. Units 0.47 ––– °C/W 62 ...
Page 2
... IRFB/IRFS/IRFSL52N15D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...
Page 3
... Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. 25°C 10. 15V 300µs PULSE WIDTH 1.00 5.0 7.0 9.0 11 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRFB/IRFS/IRFSL52N15D 1000 TOP 100 BOTTOM 5.0V 10 5.0V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 3.0 60A 2.5 2 175° ...
Page 4
... IRFB/IRFS/IRFSL52N15D 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.00 100. 175°C 10. 25°C 1.00 0.10 0.0 0.5 1.0 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode ...
Page 5
... Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFB/IRFS/IRFSL52N15D Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) ...
Page 6
... IRFB/IRFS/IRFSL52N15D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 900 ...
Page 7
... Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFB/IRFS/IRFSL52N15D Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled Driver same type as D ...
Page 8
... IRFB/IRFS/IRFSL52N15D TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. (. ...
Page 9
... H E ATSINK & Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" www.irf.com IRFB/IRFS/IRFSL52N15D - B - 4.69 (.1 85) 4.20 (.1 65) 1.3 2 (.05 2) 1.2 2 (.04 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 5 .28 (. ...
Page 10
... IRFB/IRFS/IRFSL52N15D TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" 10 INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com ...
Page 11
... TO-220 package is not recommended for Surface Mount Application. This product has been designed and qualified for the Automotive [Q101] (IRFB52N15D), IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRFB/IRFS/IRFSL52N15D (. (. ...
Page 12
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...