K4S641632H Samsung, K4S641632H Datasheet
K4S641632H
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K4S641632H Summary of contents
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... SDRAM 64Mb H-die (x4, x8, x16) 64Mb H-die SDRAM Specification * Samsung Electronics reserves the right to change products or specification without notice. Revision 1.8 August 2004 CMOS SDRAM Rev. 1.8 August 2004 ...
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SDRAM 64Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May, 2003) - Target spec release Revision 0.1 (July, 2003) - Preliminary spec release Revision 0.2 (August, 2003) - Modified IBIS characteristic. Revision 1.0 (September, 2003) - Finalized. Revision 1.1 ...
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... GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized 4,194,304 words by 4 bits 2,097,152 words by 8 bits 1,048,576 words by 16 bits, fabricated with SAMSUNGcs high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
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SDRAM 64Mb H-die (x4, x8, x16) Package Physical Dimension #54 #1 0.10 MAX 0.004 0. 0.028 #28 #27 22.62 MAX 0.891 22.22 r0.10 0.21 0.875 r0.004 0.008 +0.10 0.30 0.80 -0.05 0.004 0.0315 0.012 -0.002 54Pin TSOP(II) ...
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... CLK ADD LCKE LRAS LCBR CLK CKE CS Samsung Electronics reserves the right to change products or specification without notice. * Data Input Register Column Decoder Latency & Burst Length ...
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SDRAM 64Mb H-die (x4, x8, x16) PIN CONFIGURATION (Top view) x8 x16 DQ0 DQ0 N DDQ DDQ DDQ DQ1 N.C N.C DQ2 DQ1 DQ0 SSQ SSQ DQ3 N.C N.C ...
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SDRAM 64Mb H-die (x4, x8, x16) ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage temperature Power dissipation Short circuit current Note : Permanent device damage may ...
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SDRAM 64Mb H-die (x4, x8, x16) DC CHARACTERISTICS (x4, x8) (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode I PS CKE & CLK ...
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... Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S641632H-TC 4. K4S641632H-TL 5. Unless otherwise noted, input swing IeveI is CMOS 70qC for x16 only) A Test Condition Burst length = 1 t tt (min ...
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... All parts allow every cycle column address change case of row precharge interrupt, auto precharge and read burst stop 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP 3.3Vr 0.3V 70qC) ...
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SDRAM 64Mb H-die (x4, x8, x16) AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK ...
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SDRAM 64Mb H-die (x4, x8, x16) IBIS SPECIFICATION I Characteristics (Pull-up) OH 133MHz Voltage Min (V) I (mA) 3.45 - 3.30 - 3.00 -0.35 2.70 -3.75 2.50 -6.65 1.95 -13.75 1.80 -17.75 1.65 -20.55 1.50 -23.55 1.40 -26.2 1.00 -36.25 ...
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SDRAM 64Mb H-die (x4, x8, x16) V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 ...
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SDRAM 64Mb H-die (x4, x8, x16) SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge ...