MTB50N06VL ON Semiconductor, MTB50N06VL Datasheet

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MTB50N06VL

Manufacturer Part Number
MTB50N06VL
Description
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
MTB50N06VL
Manufacturer:
ON
Quantity:
8 578
MTB50N06VL
Power MOSFET
42 Amps, 60 Volts, Logic Level
N−Channel D
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
1. When surface mounted to an FR4 board using the minimum recommended
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
MAXIMUM RATINGS
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current − Continuous @ 25°C
Drain Current
Drain Current
Total Power Dissipation @ 25°C
Total Power Dissipation @ T
Operating and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Avalanche Energy Specified
I
pad size.
DSS
Derate above 25°C
(Note 1.)
Range
Energy − Starting T
(V
I
Purposes, 1/8″ from Case for 10
seconds
L
− Continuous
− Non−Repetitive (t
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
DD
= 42 Apk, L = 0.3 mH, R
and V
= 25 Vdc, V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
Rating
GS
Specified at Elevated Temperature
J
2
p
= 5 Vdc, Peak
= 25°C
(T
PAK
≤ 10 ms)
GS
C
= 25°C unless otherwise noted)
A
Preferred Device
G
= 1.0 MΩ)
= 25°C
p
= 25 Ω)
≤ 10 μs)
Symbol
T
V
V
V
R
R
R
V
J
E
I
P
DGR
GSM
, T
DSS
DM
T
I
I
θJC
θJA
θJA
GS
AS
D
D
D
L
stg
− 55 to
Value
0.83
62.5
147
125
175
265
260
± 15
± 20
3.0
1.2
60
60
42
30
50
1
Watts
Watts
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
Preferred devices are recommended choices for future use
and best overall value.
MTB50N06VL
MTB50N06VLT4
Device
1
ORDERING INFORMATION
G
3
T50N06VL = Device Code
Y
WW
2
R
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate
http://onsemi.com
42 AMPERES
DS(on)
60 VOLTS
1
N−Channel
Package
T50N06VL
YWW
D
D
2
2
Drain
4
Drain
D
PAK
PAK
4
= 32 mΩ
2
Publication Order Number:
= Year
= Work Week
S
CASE 418B
3
Source
STYLE 2
800/Tape & Reel
D
MTB50N06VL/D
50 Units/Rail
2
PAK
Shipping

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MTB50N06VL Summary of contents

Page 1

... D PAK CASE 418B 2 1 STYLE 2 3 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain T50N06VL YWW Gate Drain Source T50N06VL = Device Code Y = Year WW = Work Week ORDERING INFORMATION Package Shipping 2 D PAK 50 Units/Rail 2 D PAK 800/Tape & Reel Publication Order Number: MTB50N06VL/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc .25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL CHARGE (nC) T Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS The Forward ...

Page 6

DS(on) SINGLE PULSE THERMAL LIMIT T = 25°C C PACKAGE LIMIT 100 100 μ 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe ...

Page 7

INFORMATION FOR USING THE D RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection 0.42 ...

Page 8

Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Cladt. Using a board material such as Thermal Clad, an aluminum core Prior to placing surface mount components onto a printed circuit board, ...

Page 9

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings ...

Page 10

... D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTB50N06VL/D ...

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