MTD20N06HD ON Semiconductor, MTD20N06HD Datasheet

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MTD20N06HD

Manufacturer Part Number
MTD20N06HD
Description
Manufacturer
ON Semiconductor
Datasheet

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MTD20N06HD
Power MOSFET
20 Amps, 60 Volts
N−Channel DPAK
avalanche and commutation modes. This energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
1. When surface mounted to an FR−4 board using the minimum
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
MAXIMUM RATINGS
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain Current − Continuous
Drain Current
Drain Current
Total Power Dissipation
Total Power Dissipation @ T
(Note 2)
Operating and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
This Power MOSFET is designed to withstand high energy in the
Fast Recovery Diode
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Diode is Characterized for Use in Bridge Circuits
I
recommended pad size.
DSS
Derate above 25°C
Range
Energy − Starting T
(V
I
Purposes, 1/8″ from case for 10
seconds
L
− Continuous
− Non−Repetitive (t
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
DD
= 20 Apk, L = 0.3 mH, R
and V
= 25 Vdc, V
DS(on)
− Continuous @ 100°C
− Single Pulse (t
Rating
GS
Specified at Elevated Temperature
J
GS
p
= 10 Vdc, Peak
= 25°C
(T
≤ 10 ms)
= 1.0 MΩ)
C
= 25°C unless otherwise noted)
A
Preferred Device
G
= 25°C
p
= 25 Ω)
≤ 10 μs)
Symbol
T
V
V
V
R
R
R
V
J
E
I
P
DGR
GSM
, T
DSS
DM
T
I
I
θJC
θJA
θJA
GS
AS
D
D
D
L
stg
−55 to
Value
± 20
± 30
0.32
1.75
3.13
71.4
150
100
260
60
60
20
16
60
40
60
1
Watts
Watts
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
mJ
°C
°C
20N06HD Device Code
Y
WW
Preferred devices are recommended choices for future use
and best overall value.
MTD20N06HD
MTD20N06HD−1
MTD20N06HDT4
V
(BR)DSS
CASE 369D
60 V
Device
1 2
CASE 369C
1
Style 2
DPAK
2
Style 2
DPAK
ORDERING INFORMATION
3
3
= Year
= Work Week
G
http://onsemi.com
4
4
Straight Lead
35 mW@10 V
R
N−Channel
Package
DS(on)
DPAK
DPAK
DPAK
D
MARKING DIAGRAMS
Publication Order Number:
TYP
S
Gate
Gate
1
1
2500 Tape & Reel
Drain
Drain
Drain
Drain
MTD20N06HD/D
75 Units/Rail
75 Units/Rail
4
4
2
2
Shipping
(Note 1)
3
Source
3
Source
I
D
20 A
MAX

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MTD20N06HD Summary of contents

Page 1

... CASE 369C Style Drain Gate Source 4 4 Drain DPAK Style Gate Drain Source = Year = Work Week ORDERING INFORMATION Device Package Shipping DPAK 75 Units/Rail DPAK 75 Units/Rail Straight Lead DPAK 2500 Tape & Reel Publication Order Number: MTD20N06HD/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 μAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 0.5 1.0 1.5 2.0 2.5 3 DRAIN−TO−SOURCE VOLTAGE (Volts) DS Figure 1. On−Region Characteristics 0.052 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E−05 1.0E− Figure 14. Diode Reverse Recovery Waveform P (pk DUTY CYCLE 1.0E−03 1.0E−02 1.0E−01 ...

Page 8

INFORMATION FOR USING THE DPAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper ...

Page 9

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of ...

Page 10

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings ...

Page 11

... J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTD20N06HD/D ...

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