NDF04N60Z ON Semiconductor, NDF04N60Z Datasheet

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NDF04N60Z

Manufacturer Part Number
NDF04N60Z
Description
Manufacturer
ON Semiconductor
Datasheet

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NDF04N60Z, NDP04N60Z,
NDD04N60Z
N-Channel Power MOSFET
1.8 W, 600 Volts
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
Drain−to−Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, V
Power Dissipation (Note 1)
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
ESD (HBM) (JESD 22−114−B)
RMS Isolation Voltage (t = 0.3
Peak Diode Recovery
Continuous Source Current
Maximum Temperature for
Operating Junction and
Storage Temperature Range
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
Adapter (Notebook, Printer, Gaming)
LCD Panel Power
Lighting Ballasts
SD
T
L = 6.4 mH, I
sec., R.H. ≤ 30%, T
(Figure 13)
(Body Diode)
Soldering Leads, 0.063″
(1.6 mm) from Case for 10 s
Package Body for 10 s
A
= 4.0 A, di/dt ≤ 100 A/ms, V
= 100°C
Rating
D
= 4.0 A
A
= 25°C)
GS
@ 10V
DD
≤ BV
Symbol
T
(T
V
T
dv/dt
V
J
V
V
E
I
P
PKG
, T
DSS
DM
T
I
I
I
C
esd
ISO
DSS
GS
AS
D
D
S
D
L
stg
= 25°C unless otherwise noted)
, T
J
= +150°C
4500
NDF
28
600 (Note 1)
4.0 (Note 2)
2.7 (Note 2)
4.5 (Note 3)
14 (Note 2)
−55 to 150
2500
±30
300
260
4.0
51
NDD/NDP
95
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
CASE 221D
Gate
TO−220FP
1
STYLE 1
2
NDP04N60ZG
NDF04N60ZG
3
AYWW
600 V
V
Drain
DSS
ORDERING INFORMATION
or
A
Y
WW
G
MARKING DIAGRAMS
CASE 221A
1
TO−220AB
STYLE 5
http://onsemi.com
2
3
Source
= Location Code
= Year
= Work Week
= Pb−Free Package
Gate
1
Publication Order Number:
CASE 369D
Drain
Drain 3
R
STYLE 2
4
2
1
DS(ON)
IPAK
Source
2
3
Gate
1.8 Ω
(TYP) @ 2 A
NDF04N60Z/D
1
4
CASE 369AA
Drain
Drain
1 2
STYLE 2
4
2
DPAK
3
3
Source
4

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NDF04N60Z Summary of contents

Page 1

... NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • Lighting Ballasts ...

Page 2

... 4 Ω 25°C unless otherwise noted 4 4.0 A, di/dt = 100 A/ms S http://onsemi.com 2 Symbol NDF04N60Z NDD/NDP 4.4 1.3 R qJC qJA Symbol Min Typ Max BV 600 DSS / 0.6 DSS DSS 50 I ±10 ...

Page 3

T = 25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 3.5 3 2 (V) GS Figure 3. On−Resistance vs. ...

Page 4

... Single Pulse T = 25° Limit DS(on) Thermal Limit Package Limit 10 100 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Safe Operating Area for NDF04N60Z http://onsemi.com 4 400 QT 300 DS 200 Qgd V GS 100 T = 25° ...

Page 5

... SINGLE PULSE 0.001 0.000001 0.00001 0.0001 Figure 12. Thermal Impedance for NDF04N60Z ORDERING INFORMATION Order Number NDF04N60ZG NDP04N60ZG NDD04N60Z−1G NDD04N60ZG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 6

PACKAGE DIMENSIONS TO−220 FULLPAK −B− −Y− 0.25 (0.010 ...

Page 7

−T− SEATING K PLANE 0.13 (0.005) M PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE http://onsemi.com 7 NOTES: 1. DIMENSIONING AND ...

Page 8

... V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 6.172 0.243 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NDF04N60Z/D ...

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