NDF04N60Z ON Semiconductor, NDF04N60Z Datasheet
NDF04N60Z
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NDF04N60Z Summary of contents
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... NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • Lighting Ballasts ...
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... 4 Ω 25°C unless otherwise noted 4 4.0 A, di/dt = 100 A/ms S http://onsemi.com 2 Symbol NDF04N60Z NDD/NDP 4.4 1.3 R qJC qJA Symbol Min Typ Max BV 600 DSS / 0.6 DSS DSS 50 I ±10 ...
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T = 25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 3.5 3 2 (V) GS Figure 3. On−Resistance vs. ...
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... Single Pulse T = 25° Limit DS(on) Thermal Limit Package Limit 10 100 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Safe Operating Area for NDF04N60Z http://onsemi.com 4 400 QT 300 DS 200 Qgd V GS 100 T = 25° ...
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... SINGLE PULSE 0.001 0.000001 0.00001 0.0001 Figure 12. Thermal Impedance for NDF04N60Z ORDERING INFORMATION Order Number NDF04N60ZG NDP04N60ZG NDD04N60Z−1G NDD04N60ZG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...
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PACKAGE DIMENSIONS TO−220 FULLPAK −B− −Y− 0.25 (0.010 ...
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−T− SEATING K PLANE 0.13 (0.005) M PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE http://onsemi.com 7 NOTES: 1. DIMENSIONING AND ...
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... V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 6.172 0.243 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NDF04N60Z/D ...