NTMFS4833N ON Semiconductor, NTMFS4833N Datasheet

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NTMFS4833N

Manufacturer Part Number
NTMFS4833N
Description
Manufacturer
ON Semiconductor
Datasheet

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NTMFS4833N
Power MOSFET
30 V, 191 A, Single N-Channel, SO-8 FL
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb-Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain-to-Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices*
CPU Power Delivery
DC-DC Converters
Low Side Switching
qJA
qJA
qJC
= 35 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
qJA
qJA
qJC
J
, L = 1.0 mH, R
= 25°C, V
to Minimize Conduction Losses
Parameter
DD
Steady
State
= 30 V, V
(T
G
J
= 25 W)
= 25°C unless otherwise stated)
T
t
p
A
= 10 ms
= 25°C,
GS
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 10 V,
= 25°C
= 85°C
= 25°C
T
Symbol
J
dV/dt
V
EAS
V
, T
I
P
P
P
DSS
ID
DM
T
I
I
I
GS
D
D
S
D
D
D
L
STG
-55 to
Value
612.5
+150
2.35
0.91
±20
191
138
125
288
104
260
30
26
19
16
12
6
1
V/ns
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
†For information on tape and reel specifications,
NTMFS4833NT1G
NTMFS4833NT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
SO-8 FLAT LEAD
(BR)DSS
30 V
A
Y
WW
G
(Note: Microdot may be in either location)
CASE 488AA
Device
STYLE 1
G (4)
ORDERING INFORMATION
N-CHANNEL MOSFET
= Assembly Location
= Year
= Work Week
= Pb-Free Package
http://onsemi.com
1
3.0 mW @ 4.5 V
2.0 mW @ 10 V
D (5,6)
R
DS(ON)
(Pb-Free)
(Pb-Free)
Package
SO-8 FL
SO-8 FL
Publication Order Number:
MAX
S (1,2,3)
S
S
S
G
MARKING
DIAGRAM
1500/Tape & Reel
5000/Tape & Reel
NTMFS4833N/D
AYWWG
4833N
Shipping
D
D
G
I
D
191 A
MAX
D
D

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NTMFS4833N Summary of contents

Page 1

... V 191 (5,6) G (4) S (1,2,3) N-CHANNEL MOSFET MARKING DIAGRAM 4833N S AYWWG STYLE Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION † Package Shipping SO-8 FL 1500/Tape & Reel (Pb-Free) SO-8 FL 5000/Tape & Reel (Pb-Free) Publication Order Number: NTMFS4833N/D ...

Page 2

... Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. NTMFS4833N Symbol R qJC R qJA R qJA (T = 25°C unless otherwise specified) ...

Page 3

... Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. NTMFS4833N = 25°C unless otherwise specified) J Symbol Test Condition ...

Page 4

... GS Figure 3. On-Resistance vs. Gate-to-Source Voltage 1. 1.5 GS 1.25 1.0 0.75 0.5 0.25 0 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTMFS4833N TYPICAL PERFORMANCE CURVES 200 ≥ 4 175 3.8 V 150 125 3.6 V 100 0.004 T = 25° ...

Page 5

... SINGLE PULSE T = 25°C C 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTMFS4833N TYPICAL PERFORMANCE CURVES 25° iss oss Figure 8. Gate-To-Source and Drain-To-Source ...

Page 6

... NTMFS4833N TYPICAL PERFORMANCE CURVES 1000 100 100 PULSE WIDTH (ms) Figure 13. Avalanche Characteristics http://onsemi.com 6 25°C 100°C 125°C 1,000 10,000 ...

Page 7

... D 5.15 BSC D1 4.50 4.90 5.10 D2 3.50 --- 4.22 E 6.15 BSC E1 5.50 5.80 6.10 E2 3.45 --- 4.30 e 1.27 BSC G 0.51 0.61 0. 0.51 --- --- L 0.51 0.61 0.71 L1 0.05 0.17 0.20 M 3.00 3.40 3. --- 12 SOLDERING FOOTPRINT 1.270 0.750 4X 1.000 0.965 2X 0.905 2X 4.530 0.475 2X 1.530 4.560 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4833N/D ...

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