RA20H8087M-101 MITSUBISHI, RA20H8087M-101 Datasheet

RA20H8087M-101

Manufacturer Part Number

RA20H8087M-101

Description

Manufacturer

MITSUBISHI

Datasheet

1.RA20H8087M-101.pdf (10 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RA20H8087M-101

Quantity:

1 400

Current page: 1 of 10
Download datasheet (111Kb)

DESCRIPTION

Module for 12.5-volt mobile radios that operate in the 806- to

870-MHz range.

enhancement-mode MOSFET transistors. Without the gate

voltage (V

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

• P

• Broadband Frequency Range: 806-870MHz

• Low-Power Control Current I

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

RoHS COMPLIANCE

• RA20H8087M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

ORDERING INFORMATION:

RA20H8087M

current with the gate voltage and controlling the output power

with the input power

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

2.Lead in electronic Ceramic parts.

out

=5V, the typical gate current is 1 mA.

The RA20H8087M is a 20-watt RF MOSFET Amplifier

The battery can be connected directly to the drain of the

fluorescent tubes.

≅0 @ V

>20W, η

RA20H8087M-101

ORDER NUMBER

=0V), only a small leakage current flows into the

>25% @ V

=12.5V, V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

=0V)

=12.5V, V

RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO

=1mA (typ) at V

SUPPLY FORM

10 modules/tray

=5V, P

Antistatic tray,

=50mW

=5V

1/10

RA20H8087M

BLOCK DIAGRAM

Silicon RF Power Semiconductors

RF Input (P

Gate Voltage (V

Drain Voltage (V

RF Output (P

RF Ground (Case)

PACKAGE CODE: H2S

)

out

)

), Power Control

), Battery

24 Jun 2010

Related parts for RA20H8087M-101

RA20H8087M-101 Summary of contents

Page 1

... RoHS COMPLIANCE • RA20H8087M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts ...

Page 2

... V =12. =50mW in V =10.0-15.5V, P =25-70mW 25W (V control), Load VSWR=3:1 out GG V =15.2V, P =50mW, P =20W ( out Load VSWR=8:1 2/10 Silicon RF Power Semiconductors RA20H8087M RATING 17 6 100 40 -30 to +110 -40 to +110 MIN TYP 806 - parasitic oscillation control degradation or destroy UNIT ...

Page 3

... -15 - out f=870MHz =12.5V = 3/10 Silicon RF Power Semiconductors RA20H8087M RoHS COMPLIANCE rd HARMONICS versus FREQUENCY V =12. =50mW =20W out =20W out 770 790 810 830 850 870 FREQUENCY f(MHz ...

Page 4

... DD OUTPUT POWER and DRAIN CURRENT out 5.5 2.5 (V) 4/10 Silicon RF Power Semiconductors RA20H8087M RoHS COMPLIANCE versus DRAIN VOLTAGE 16 f=806MHz =5V =50mW out DRAIN VOLTAGE V ...

Page 5

... P out 5.5 2.5 ( out 4.5 5 5.5 (V) GG 5/10 Silicon RF Power Semiconductors RA20H8087M RoHS COMPLIANCE versus GATE VOLTAGE 12 I f=851MHz =12.5V =50mW P in out 3.5 4 4.5 5 5.5 GATE VOLTAGE V ( Jun 2010 ...

Page 6

... OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) 3.0 ±0.3 7.25 ±0 12.0 ±1 16.5 ±1 43.5 ±1 RA20H8087M RoHS COMPLIANCE 66.0 ±0.5 60.0 ±0.5 51.5 ±0 Ø0.45 ±0.15 55.5 ±1 (50.4) 6/10 Silicon RF Power Semiconductors RA20H8087M 2-R2 ±0 Input ( Gate Voltage ( Drain Voltage ( Output (P ) out 5 RF Ground (Case Jun 2010 ...

Page 7

... RoHS COMPLIANCE Power DUT Meter =50Ω G Directional Coupler Power DC Power Supply V Supply V GG 7/10 Silicon RF Power Semiconductors RA20H8087M Spectrum 5 Analyzer =50Ω L Directional Attenuator Coupler + - Input (P 2 Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case ...

Page 8

... R I =25% out th(ch-case (°C/W) (A) 23.0 0.18 3.2 2.10 1.6 4. case =20W, the required thermal resistance R out 8/10 Silicon RF Power Semiconductors RA20H8087M RoHS COMPLIANCE V DD (V) 12 out in th(ch-case) + 29.9 °C case = T + 61.6 °C case = T + 60.8 °C case ) below 90°C. For an ambient case = ( T ...

Page 9

... Please refer to the additional precautions in the formal specification sheet. RA20H8087M RoHS COMPLIANCE =5V (maximum), the nominal output power becomes available. GG 9/10 Silicon RF Power Semiconductors RA20H8087M Jun 2010 ...

Page 10

... If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. RA20H8087M Keep safety first in your circuit designs ! Notes regarding these materials 10/10 Silicon RF Power Semiconductors RA20H8087M RoHS COMPLIANCE 24 Jun 2010 ...

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