IS62LV256-70T Integrated Silicon Solution, IS62LV256-70T Datasheet

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IS62LV256-70T

Manufacturer Part Number
IS62LV256-70T
Description
Manufacturer
Integrated Silicon Solution
Datasheets

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62LV256-70TI
Manufacturer:
ISSI
Quantity:
20 000
IS62LV256
FEATURES
• Access time: 45, 70 ns
• Low active power: 70 mW
• Low standby power
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 3.3V power supply
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. K
12/11/02
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
32K x 8 LOW VOLTAGE STATIC RAM
— 45 µW CMOS standby
required
I/O0-I/O7
A0-A14
VCC
GND
WE
OE
CE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
32,768-word by 8-bit static RAM. It is fabricated using
high-performance CMOS double-metal technology.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation is reduced to
10 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (CE) input and an active LOW Output Enable
(OE) input. The active LOW Write Enable (WE) controls both
writing and reading of the memory.
The IS62LV256 is pin compatible with other 32K x 8 SRAMs
in 300-mil SOJ, 330-mil plastic SOP, and TSOP (Type I Normal
and Reverse Bent) packages.
ISSI
IS62LV256 is a very high-speed, low power,
MEMORY ARRAY
COLUMN I/O
256 X 1024
ISSI
DECEMBER 2002
ISSI
®
's
1

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