STP4NA80FI STMicroelectronics, STP4NA80FI Datasheet - Page 3

• Manufacturer Part Number: STP4NA80FI
• Description: N - Channel Enhancement Mode Fast Power MOS Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Areas for TO-220
Symbol
Symbol
Symbol
(di/dt)
I
V
t
SDM
t
I
S D
r(Vof f)
Q
Q
d(on)
I
Q
RRM
Q
S D
t
t
t
t
rr
c
r
gs
gd
f
rr
g
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 47
= 47
= 47
= 4 A
= 4 A
= 400 V
= 640 V
= 640 V
= 640 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
di/dt = 100 A/ s
V
V
GS
GS
I
V
I
V
I
I
D
D
D
D
T
= 0
GS
GS
= 10 V
j
= 2 A
= 4 A
= 4 A
= 4 A
= 150
= 10 V
= 10 V
Safe Operating Areas for ISOWATT220
o
V
C
GS
= 10 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
10.5
170
680
27
70
44
18
60
20
90
31
7
STP4NA80/FI
Max.
Max.
Max.
100
130
1.6
40
65
85
30
16
4
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10