SD214DE Linear Integrated Systems, SD214DE Datasheet

SD214DE

Manufacturer Part Number

SD214DE

Description

N-CHANNEL LATERAL DMOS SWITCH

Manufacturer

Linear Integrated Systems

Datasheet

1.SD214DE.pdf (2 pages)

Current page: 1 of 2
Download datasheet (474Kb)

Linear Integrated Systems

Product Summary

Features

• Ultra-High Speed Switching—

• Ultra-Low Reverse Capacitance: 0.2 pF

• Low Guaranteed

• Low Turn-On Threshold Voltage

• N-Channel Enhancement Mode

Description

The SD210DE/214DE are enhancement-mode MOSFETs

designed for high speed low-glitch switching in audio, video,

and high-frequency applications. The SD214DE is normally used

for 10-V analog switching. These MOSFETs utilize lateral

construction to achieve low capacitance and ultra-fast switching

speeds. These MOSFETs do not have a gate protection Zener

Absolute Maximum Ratings (T

Gate-Drain, Gate-Source Voltage .........................................................

Gate-Substrate Voltage .........................................................................

Drain-Source Voltage

Source-Drain Voltage

Drain-Substrate Voltage

r DS

@5 V

(SD210DE) ....................................... 30 V

(SD214DE) ....................................... 20 V

(SD210DE) ....................................... 10 V

(SD214DE) ....................................... 20 V

(SD210DE) ....................................... 30 V

(SD214DE) ....................................... 25 V

t ON

: 1 ns

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Benefits

• High-Speed System Performance

• Low Insertion Loss at High Frequencies

• Low Transfer Signal Loss

• Simple Driver Requirement

• Single Supply Operation

40 V

30 V

= 25

diode which results in lower gate leakage and voltage capability

from gate to substrate. A poly-silicon gate is featured for

manufacturing reliability.

For similar products see: quad array—SD5000/5400 series, and

Zener protected—SD211DE/SST211 series.

Source-Substrate Voltage

Drain Current ........................................................................................ 50 mA

Lead Temperature (1/16” from case for 10 seconds) ............................. 300

Storage Temperature .................................................................... -65 to 150

Operating Junction Temperature ................................................. -55 to 125

Power Dissipation

Notes:

a. Derate 3 mW/

C Unless Otherwise Noted)

C above 25

....................................................................................................................................

N-CHANNEL LATERAL

SD210DE/214DE

DMOS SWITCH

(SD210DE) ....................................... 15 V

(SD214DE) ....................................... 25 V

Applications

• Fast Analog Switch

• Fast Sample-and-Holds

• Pixel-Rate Switching

• DAC Deglitchers

• High-Speed Driver

300 mW

Related parts for SD214DE

SD214DE Summary of contents

Page 1

... Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for 10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener Absolute Maximum Ratings (T Gate-Drain, Gate-Source Voltage ...

Page 2

... C unless otherwise noted the body (substrate) and V (BR) c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Linear Integrated Systems is breakdown. • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 ...

Related keywords

SD214DE datasheet
SD214DE data sheet
SD214DE pdf datasheet
SD214DE component
SD214DE part
SD214DE distributor
SD214DE RoHS
SD214DE datasheet download