RN47A3JE TOSHIBA Semiconductor CORPORATION, RN47A3JE Datasheet - Page 3

• Manufacturer Part Number: RN47A3JE
• Description: Toshiba Transistor Silicon Npn?pnp Epitaxial Type Pct Process Bias Resistor Built-in Transistor
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Characteristics
Characteristics
(Ta = 25°C) (Q1)
(Ta = 25°C) (Q2)
V
V
V
V
Symbol
Symbol
V
V
R1/R2
R1/R2
CE (sat)
CE (sat)
I
I
I
I
I
I (OFF)
I
I (OFF)
CBO
CEO
EBO
h
I (ON)
C
CBO
CEO
EBO
h
I (ON)
C
R1
R1
f
f
FE
FE
T
ob
T
ob
V
V
V
V
I
V
V
V
V
V
V
V
V
I
V
V
V
V
C
C
CB
CE
EB
CE
CE
CE
CE
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 5 mA, I
= − 5 mA, I
3
= 50 V, I
= 50 V, I
= 10 V, I
= 5 V, I
= 0.2 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= − 50 V, I
= − 50 V, I
= − 10 V, I
= − 5 V, I
= − 0.2 V, I
= − 5 V, I
= − 10 V, I
= − 10 V, I
Test Condition
Test Condition
B
C
C
B
C
C
C
C
E
B
E
= 0.25 mA
C
= 10 mA
= 0.1 mA
E
B
C
C
E
= − 0.25 mA
= 0
= 0
= 0
= 0, f = 1 MHz
C
= 5 mA
= − 10 mA
= − 0.1 mA
= 5 mA
= 0
= 0
= 0
= 0, f = 1 MHz
⎯
⎯
= − 5 mA
⎯
⎯
= − 5 mA
− 0.38
0.38
− 1.2
− 1.0
Min
Min
1.2
1.0
0.8
0.8
50
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
7
Typ.
Typ.
− 0.1
250
200
0.1
1.0
1.0
⎯
⎯
⎯
⎯
⎯
⎯
10
⎯
⎯
⎯
⎯
⎯
⎯
10
3
3
RN47A3JE
2004-07-01
− 0.71
− 100
− 500
Max
0.71
Max
− 0.3
− 2.4
− 1.5
100
500
0.3
2.4
1.5
1.2
1.2
13
13
⎯
⎯
⎯
⎯
⎯
⎯
MHz
MHz
Unit
Unit
mA
mA
k Ω
k Ω
nA
pF
nA
pF
V
V
V
V
V
V