SI7115DN Vishay, SI7115DN Datasheet - Page 4

• Manufacturer Part Number: SI7115DN
• Description: P-channel 150-v D-s Mosfet
• Manufacturer: Vishay

Si7115DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.5
100
1.0
0.7
0.4
0.1
0.1
10
1
0.00
- 50
- 25
Source-Drain Diode Forward Voltage
0.3
V
T
J
SD
0
= 150 °C
Threshold Voltage
T
– Source-to-Drain Voltage (V)
J
– Temperature (°C)
25
0.6
I
50
D
= 250 µA
0.9
0.01
100
75
0.1
10
1
0.1
25 °C
I
D
Safe Operating Area, Junction-to-Ambient
100
*V
= 5 mA
Single Pulse
T
GS
A
1.2
= 25 °C
*Limited by r
125
V
minimum V
DS
1
– Drain-to-Source Voltage (V)
New Product
150
1.5
DS(on)
100
100
0.01
0.01
10 10
0.1 0.1
GS
0.0 0.01
1
*V *V
Sin Single le Pulse
T
GS
A
= 25 °C
= 25 °C
*Limited by
*Limited by r
V
at which r
DS
minimum
minimum V
0.1 0.1
10
– Drain-to-Source
– Drain-to-Source Voltage (V
DS(on
DS(on)
GS
at which
at which r
1
oltage (V)
DS(on
DS(on)
10
is is specified
specified
DS(on)
100
100
100 m
100 ms
1 ms
10 m
10 ms
1 1 s
10 10 s
dc dc
100
is specified
50
40
30
20
10
2.0
1.6
1.2
0.8
0.4
0.0
0
0.01
10 ms
100 ms
1 ms
10 s
1 s
dc
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
1
1000
2
0.1
V
GS
3
– Gate-to-Source Voltage (V)
Time (sec)
4
25 °C
1
5
S-70943–Rev. A, 14-May-07
Document Number: 73864
6
125 °C
7
10
8
9
100
10