HD2A3M Renesas Electronics Corporation., HD2A3M Datasheet

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HD2A3M

Manufacturer Part Number
HD2A3M
Description
On-chip Resistor Npn Silicon Epitaxial Transistor For Mid-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D18007EJ4V0DS00 (4th edition)
Date Published September 2006 NS CP(K)
Printed in Japan
FEATURES
• High current drives such as IC outputs and actuators available
• On-chip bias resistor
• The zener diode connected between the collector and base of the transistor
• Low power consumption during drive
HD2 SERIES LISTS
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50 %
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
HD2A3M
HD2A4M
Products
HD2L2Q
HD2F2Q
HD2A4A
HD2F3P
HD2L3N
2. When 0.7 mm × 16 cm
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Marking
on-chip resistor NPN silicon epitaxial transistor
LA
LB
LC
LD
LE
LY
LF
I
2
C(pulse)
P
Symbol
ceramic board is used
T
V
V
V
I
I
C(DC)
B(DC)
T
CBO
CEO
Note2
T
EBO
stg
j
Note1
R
0.47
0.22
1
1.0
2.2
4.7
10
(kΩ)
A
For mid-speed switching
= 25°C)
DATA SHEET
−55 to +150
R
Ratings
60±10
60±10
2
1.0
4.7
2.2
150
10
10
10
10
1.0
2.0
2.0
10
20
(kΩ)
Unit
mA
°C
°C
W
V
V
V
A
A
COMPOUND TRANSISTOR
PACKAGE DRAWING (UNIT: mm)
HD2 SERIES
2006

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HD2A3M Summary of contents

Page 1

... High current drives such as IC outputs and actuators available • On-chip bias resistor • The zener diode connected between the collector and base of the transistor • Low power consumption during drive HD2 SERIES LISTS Products Marking HD2A3M LA HD2F3P LB HD2L3N LC HD2A4M ...

Page 2

... HD2A3M ELECTRICAL CHARACTERISTICS (T Parameter Symbol Collector cutoff current I CBO Note DC current gain h FE1 Note DC current gain h FE2 Note DC current gain h FE3 Note Low level output voltage V OL Note Low level input voltage V IL Input resistance R 1 E-to-B resistance R 2 μ Note PW ≤ 350 s, duty cycle ≤ ...

Page 3

HD2A4M ELECTRICAL CHARACTERISTICS (T Parameter Symbol Collector cutoff current I CBO Note DC current gain h FE1 Note DC current gain h FE2 Note DC current gain h FE3 Note Low level output voltage V OL Note Low level input ...

Page 4

HD2A4A ELECTRICAL CHARACTERISTICS (T Parameter Symbol Collector cutoff current I CBO Note DC current gain h FE1 Note DC current gain h FE2 Note DC current gain h FE3 Collector saturation voltage V CE(sat) Note Note V Low level input ...

Page 5

TYPICAL CHARACTERISTICS (T = 25°C) A Data Sheet D18007EJ4V0DS HD2 SERIES 5 ...

Page 6

The information in this document is current as of September, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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