SI2301DS Vishay, SI2301DS Datasheet - Page 3

• Manufacturer Part Number: SI2301DS
• Description: P-channel 1.25-w, 2.5-v Mosfet
• Manufacturer: Vishay

Document Number: 70627
S-31990—Rev. E, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 2.8 A
On-Resistance vs. Drain Current
= 6 V
2
1
V
2
Q
DS
g
Output Characteristics
I
D
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
V
4
GS
2
0, 0.5, 1 V
= 5, 4.5, 4, 3.5, 3 V
V
4
GS
= 2.5 V
6
3
V
6
GS
2.5 V
8
4
= 4.5 V
1.5 V
2 V
10
8
5
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
0.5
C
= 2.8 A
rss
V
= 4.5 V
DS
V
T
GS
J
3
0
Transfer Characteristics
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
C
1.0
- Gate-to-Source Voltage (V)
oss
Capacitance
C
Vishay Siliconix
iss
1.5
50
6
T
C
= - 55_C
25_C
Si2301DS
2.0
100
9
www.vishay.com
2.5
125_C
150
3.0
12
3