FFD08S60S-F085 Fairchild Semiconductor, FFD08S60S-F085 Datasheet
FFD08S60S-F085
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FFD08S60S-F085 Summary of contents
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... F08S60S FFD08S60S_F085 ©2009 Fairchild Semiconductor Corporation FFD08S60S_F085 Rev. A1 STEALTH 8A, 600V Stealth2 Rectifier The FFD08S60S_F085 is stealth 2 rectifier with soft = 8A) F recovery characteristics (t recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swith- ching applications ...
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... S factor 8A, di/dt = 200A/ factor Avalanche Energy (L = 40mH) AVL Notes: 1. Pulse : Test Pulse width = 300us, Duty Cycle = 2% FFD08S60S_F085 Rev 25°C unless otherwise noted C Test Conditions T = 25° 125° 25° 125° 30V T = 25° ...
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... Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop Figure 3. Typical Junction Capacitance Figure 5. Typical Reverse Recovery Current FFD08S60S_F085 Rev 25°C unless otherwise noted C Figure 2. Typical Reverse Current Figure 4. Typical Reverse Recovery Time Figure 6. Forward Current Deration Curve 3 www.fairchildsemi.com ...
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... Mechanical Dimensions ©2009 Fairchild Semiconductor Corporation FFD08S60S_F085 Rev. A1 D-PAK (TO252) 4 December 2008 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FFD08S60S_F085 Rev. A1 ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...