SUF-3000 Sirenza Microdevices, SUF-3000 Datasheet

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SUF-3000

Manufacturer Part Number
SUF-3000
Description
Dc-6.5 Ghz, Gaas Hbt Mmic Amplifier Die
Manufacturer
Sirenza Microdevices
Datasheet
Product Description
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
Test Conditions:
Broomfield, CO 80021
Sirenza Microdevices’ SUF-3000 is a monolithically matched broadband
high IP3 gain block covering 0.25-16 GHz. This pHEMT FET-based
amplifier uses a patented self-bias Darlington topology featuring a gain
and temperature compensating active bias network that operates from
a single 5V supply. It offers efficient, cascadable performance in a
compact 0.88 x 0.80 mm
applications.
303 S. Technology Ct.
Symbol
ΔG/ΔT
Rth, j-l
P1dB
OIP3
12
10
ORL
IRL
Isol
NF
8
6
4
2
0
G
V
I
D
D
0
p
Test Conditions:
Small Signal Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Device Operating Voltage
Device Operating Current
Device Gain Temperature Coefficient
Thermal Resistance (junction-to-backside)
IRL
V
4
Z
D
Gain & Return Loss vs. Frequency
S
= 5.0V, I
= Z
ORL
2
GAIN
die. It is well-suited for RF, LO, and IF driver
L
= 50 Ohms, 25C, GSG Probe Data With Bias Tees
(GSG Probe Data)
Fre que ncy (Ghz)
D
8
= 51mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
Parameters
V
T
L
S
= 25ºC
= 5 V
12
\
16
Phone: (800) SMI-MMIC
I
Z
D
S
= 80 mA Typ.
= Z
L
20
= 50 Ohms
0
-5
-10
-15
-20
-25
-30
1
dB/°C
°C/W
Units
dBm
dBm
mA
dB
dB
dB
dB
dB
V
Product Features
• 5V Operation, No Dropping Resistor
Applications
SUF-3000
0.25-16 GHz, Cascadable pHEMT
MMIC Amplifier
Gain = 10 dB @ 6 GHz
P1dB = 15.5 dBm @ 6 GHz
Low-noise, Efficient Gain Block
Low Gain Variation vs. Temperature
Patented Thermal Design
Patented Self-Bias Darlington Circuit
Broadband Communications
High IP3 RF Driver Applications
Broadband Performance
LO and IF Mixer Applications
Test Instrumentation
Military & Space
OIP
Measured with Bias Tees
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Frequency
14 GHz
14 GHz
14 GHz
14 GHz
14 GHz
14 GHz
14 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
Min.
Preliminary
-22.5
-32.5
-15.0
-16.5
-17.0
-15.5
-15.0
-15.0
-0.01
http://www.sirenza.com
10.0
10.0
16.0
15.5
13.5
27.0
26.5
19.5
14.0
Typ.
224
8.0
4.2
4.8
5.0
5.0
51
EDS-105417 Rev A
Max.

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SUF-3000 Summary of contents

Page 1

... Product Description Sirenza Microdevices’ SUF-3000 is a monolithically matched broadband high IP3 gain block covering 0.25-16 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It offers efficient, cascadable performance in a compact 0 ...

Page 2

... Fre que ncy (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier P1dB vs. Frequency Fre que ncy (GHz) S22 vs. Frequency 0 -5 -10 -15 -20 -25 ...

Page 3

... Test Conditions: Test Conditions: GSG Probe Data With Bias Tees, OIP Current Variation vs. Temperature Current vs. Voltage 4.75 4.80 4.85 4.90 4.95 5. 303 S. Technology Ct. Broomfield, CO 80021 SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier Gain P1dB (dB) (dBm) 10.5 10.0 10.0 15.5 10.0 16.0 10.0 16.0 10.0 15.5 9.5 15.0 8.0 13.5 7.0 13.0 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C 3 Operating Temperature Range (T Operation of this device beyond any one of these limits may cause permanent damage ...

Page 4

... Bias is applied through this pad. Die Die bottom must be connected to RF/DC ground GND using silver-filled conductive epoxy. Bottom Device Assembly DC Block 303 S. Technology Ct. Broomfield, CO 80021 SUF-3000 0.25-16 GHz Cascadable MMIC Amplifier 1 Description Interconnect Wire or Ribbon 50 Ω Line 3-5 mil gap Phone: (800) SMI-MMIC 4 2 Notes: 1 ...

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