BA51W12SAT ROHM Co. Ltd., BA51W12SAT Datasheet

no-image

BA51W12SAT

Manufacturer Part Number
BA51W12SAT
Description
Dual Output Voltage Regulator With Power Saving
Manufacturer
ROHM Co. Ltd.
Datasheet
   
   
   
∗1 Reduced by 16mW for each increase in Ta of 1 °C over 25 °C .
∗ 2 Applied time is less than 200 ms (tr
50V
35V
   
0V
Power supply voltage
Power dissipation
Operating temperature
Storage temperature
Peak applied voltage
Power supply voltage
Parameter
Parameter
tr≥1ms
V
Symbol
Symbol
CC
Max.200ms
Topr
1ms).
Tstg
V
V
Pd
Peak
CC
CC
°
Min.
10
−40~+85
−55~+150
Limits
°
2000 ∗
Typ.
14
35
50 ∗
2
1
Max.
25
Unit
mW
Unit
°C
°C
V
V
V

Related parts for BA51W12SAT

BA51W12SAT Summary of contents

Page 1

Parameter Symbol Power supply voltage Power dissipation Operating temperature Topr Storage temperature Tstg Peak applied voltage V Peak CC ∗1 Reduced by 16mW for ...

Page 2

V CC REFERENCE VOLTAGE 2 CTL 5 GND Pin No. Pin name 1 OUT1 Output1 (9V, 1A Power supply CC 3 GND Ground 4 OUT2 Output2 (5V, 500mA) 5 ...

Page 3

CTL (5pin) 25k 25k GND (3pin Parameter Symbol Power save supply current I ST Bias current I b <9V output section> (Output 1) Output voltage Minimum ...

Page 4

V CC CTL 0.33µ 4V 14V 10→25V →25V 14V 14V 14V CC V ...

Page 5

CTL GND 0.33µ =8. =4.75V CC Fig.3 Circuit for measuring minimum voltage difference V A 0.33µ 14V 0mA ...

Page 6

V CC CTL 0.33µ 14V CC 2.0V Fig.6 Circuit for measuring mode switching voltage 0.33µ 14V CC 5V Fig.7 Circuit for measuring input high level current     0.33µ OUT1 OUT2 GND + V ...

Page 7

    µ µ ...

Page 8

Output Resistance (Pin substrate Parasitic diode GND (Pin A) Parasitic diode GND Fig.9 Simplified structure of bipolar IC Transistor (NPN) B (Pin GND ...

Page 9

V =14V CC 11 Ta=25˚ 500 1000 1500 2000 OUTPUT CURRENT : I ( mA) O Fig.10 Output current ...

Related keywords