IDD04E120 Infineon Technologies Corporation, IDD04E120 Datasheet
IDD04E120
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IDD04E120 Summary of contents
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Fast Switching EmCon Diode Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling Type Package IDP04E120 PG-TO220-2-2. Maximum Ratings °C, unless ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Reverse leakage current ...
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Electrical Characteristics Parameter Dynamic Characteristics Reverse recovery time V =800V, I =4A, di /dt=750A/µ =800V, I =4A, di /dt=750A/µ =800V, I =4A, di /dt=750A/µ ...
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Power dissipation tot C parameter ≤ 150° 100 3 Typ. diode forward current ...
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Typ. reverse recovery time (di /dt parameter 800V 125° 500 ns 400 350 300 250 200 150 100 50 0 200 300 400 500 600 700 7 Typ. ...
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Max. transient thermal impedance thJC p parameter : IDP04E120 10 K single pulse - ...
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Rev.2 symbol E A 9.70 B 15.30 C 0.65 D 3.55 E 2. 13.00 H 17.20 J 4. ...
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Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...