TF252TH Sanyo Semiconductor Corporation, TF252TH Datasheet
TF252TH
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TF252TH Summary of contents
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... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TF252TH SANYO Semiconductors N-channel Silicon Junction FET Electret Condenser Microphone ...
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... Reverse Transfer Capacitance [Ta=25° =2V =2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage : The TF252TH is classified by I DSS as follows : (unit : * Rank 4 I DSS 140 to 240 210 to 350 Package Dimensions ...
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... Drain-to-Source Voltage DSS 1 =2V 1 =10mV f=1kHz 1 =2.2kΩ 1.2 Cin=5pF I DSS : V DS =2V 1.0 0.8 0.6 0.4 0.2 0 --0.2 --0.4 100 150 200 250 300 Zero-Gate Voltage Drain Current, I DSS -- µA TF252TH 400 V DS =2V 350 300 250 200 150 100 50 0 --0.1 0 --0.6 IT12442 --0.60 --0.55 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 --0.20 350 400 100 Zero-Gate Voltage Drain Current, I DSS -- µ ...
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... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2007. Specifications and information herein are subject to change without notice. TF252TH 1.4 1.2 1.0 0.8 ...