SIB417EDK Vishay, SIB417EDK Datasheet

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SIB417EDK

Manufacturer Part Number
SIB417EDK
Description
P-channel 1.2-v G-s Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 68699
S-81192-Rev. A, 26-May-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 8
1.60 mm
6
(V)
PowerPAK SC-75-6L-Single
D
5
D
4
0.058 at V
0.080 at V
0.100 at V
0.130 at V
0.250 at V
S
D
1
h
R
S
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
1.60 mm
2
GS
GS
GS
GS
GS
G
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
= - 1.2 V
J
3
= 150 °C)
b, f
P-Channel 1.2-V (G-S) MOSFET
Ordering Information: SiB417EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
- 9.0
- 9.0
- 4.0
- 2.0
- 0.5
D
Part # code
(A)
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
Marking Code
7.3 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
B G X
X X X
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• 100 % R
• Load Switch for Portable Devices
Symbol
Symbol
T
R
R
SC-75 Package
- Small Footprint Area
- Low On-Resistance
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
7.5
41
- 55 to 150
- 5.8
- 4.6
2.4
1.6
Limit
- 2
- 9
- 9
- 15
- 9
260
± 5
8.4
- 8
13
b, c
b, c
b, c
a
a
b, c
b, c
a
Maximum
9.5
51
Vishay Siliconix
SiB417EDK
G
®
P-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
D
S
1

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SIB417EDK Summary of contents

Page 1

... 1. Ordering Information: SiB417EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiB417EDK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 0 1000 800 600 400 200 1 1.0 0.8 0 SiB417EDK Vishay Siliconix ° 125 ° °C C 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... SiB417EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 5000 4000 3000 2000 1000 Gate-to-Source Voltage (V) GS Gate Source Voltage vs. Gate Current 0.7 0 250 µ ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. SiB417EDK Vishay Siliconix 100 µ 100 ...

Page 6

... SiB417EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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