NDS8963 National Semiconductor Corporation, NDS8963 Datasheet - Page 2

• Manufacturer Part Number: NDS8963
• Description: Dual N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: National Semiconductor Corporation

Notes:
ELECTRICAL CHARACTERISTICS
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSSF
GSSR
D(on)
S
GS(th)
DS(ON)
SD
P
DSS
drain pins. R
Typical R
D
JA
t
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
a. 78
b. 125
c. 135
Scale 1 : 1 on letter size paper.
R
T
JA
1a
J
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
T
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage V
JC
o
A
t
C/W when mounted on a 0.5 in
o
o
is guaranteed by design while R
C/W when mounted on a 0.003 in
C/W when mounted on a 0.02 in
R
JC
T
J
R
T
A
CA
t
I
2
D
(Note 2)
t
R
DS ON @T
2
pad of 2oz copper.
CA
2
2
pad of 2oz copper.
is determined by the user's board design.
pad of 2oz copper.
J
(T
1b
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
= 24 V, V
= V
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 4.5 V, I
= 10 V, V
= 4.5 V, V
= 0 V, I
GS
, I
D
S
D
= 250 µA
D
= 1.3 A
DS
D
= 250 µA
DS
GS
DS
DS
= 2.5 A
= 2 A
= 5 V
= 0 V
= 5 V
= 0 V
= 0 V
(Note 2)
T
J
1c
= 55
o
C
Min
7.5
30
3
1
Typ
Max
-100
0.16
0.25
100
1.3
1.2
10
1
3
NDS8963 Rev. A
Units
µA
µA
nA
nA
A
V
V
A
V