QS5U12 ROHM Co. Ltd., QS5U12 Datasheet - Page 2

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QS5U12

Manufacturer Part Number

QS5U12

Description

2.5v Drive Nch Sbd Mosfet

Manufacturer

ROHM Co. Ltd.

Datasheet

1.QS5U12.pdf (5 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

QS5U12

Manufacturer:

ROHM

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

QS5U12TR

Manufacturer:

ROHM

Quantity:

83 000

Current page: 2 of 5
Download datasheet (91Kb)

Transistors

∗Pulsed

<MOSFET>

Drain-source voltage

Gate-source voltage

Drain current

Channel temperature

Power dissipation

<Di>

Repetitive peak reverse voltage

Reverse voltage

Forward current

Forward current surge peak

Junction temperature

Power dissipation

<MOSFET AND Di>

Total power dissipation

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

<MOSFET>

<Body diode (source-drain)>

<Di>

Forward voltage

Reverse current

Source current

(Body diode)

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source

Gate-drain

Forward voltage

∗ Pulsed

Absolute maximum ratings (Ta=25°C)

Electrical characteristics (Ta=25°C)

Parameter

charge

charge

Parameter

Continuous

Pulsed

Continuous

Pulsed

•

1cyc. ∗3 Mounted on a ceramic board

V

Symbol

R

V

(BR) DSS

t

t

C

I

I

C

V

GS (th)

DS (on)

C

d (on)

d (off)

Q

Q

Y

GSS

DSS

Q

V

I

t

t

oss

SD

R

iss

rss

r

gd

fs

f

gs

F

g

∗

∗

∗

∗

∗

∗

∗

∗

∗

∗

Min.

0.5

1.5

30

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

Symbol

V

V

Tstg

Tch

V

I

I

I

P

V

FSM

P

P

Tj

DSS

GSS

I

I

I

DP

SP

RM

D

S

F

D

R

D

D

Typ.

110

175

2.8

0.6

0.8

71

76

50

25

10

21

−

−

−

−

−

8

8

−

−

−

∗1

∗1

∗3

∗2

∗3

∗3

Max.

0.45

200

100

107

154

1.2

1.5

3.9

−55 to +150

10

−

1

−

−

−

−

−

−

−

−

−

−

Limits

±2.0

±8.0

1.25

150

150

0.8

3.2

0.9

1.0

3.0

0.7

30

12

25

20

Unit

mΩ

mΩ

mΩ

µA

µA

pF

pF

pF

nC

nC

nC

µA

ns

ns

ns

ns

V

V

S

V

V

V

I

V

V

I

I

I

V

V

V

f=1MHz

I

V

V

R

R

V

V

I

I

V

D

D

D

D

D

D

I

F

S

R

GS

DS

DS

DS

DS

GS

DD

GS

L

G

DD

GS

=1.0A

=1mA, / V

=2.0A, V

=2.0A, V

=2.0A, V

=1.0A

=2.0A

W/ELEMENT

W/ELEMENT

=3.2A / V

W / TOTAL

=15Ω

=20V

=10Ω

=30V / V

=10V / I

=10V, I

=10V

=12V / V

=0V

=4.5V

=4.5V

15V

15 V

Unit

°C

°C

°C

V

V

A

A

A

A

V

V

A

A

Conditions

GS

GS

GS

D

D

GS

GS

=2.0A

DS

=1mA

=4.5V

=4V

=2.5V

GS

=0V

=0V

=0V

=0V

Rev.B

QS5U12

2/4

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