BSO612CVG Infineon Technologies Corporation, BSO612CVG Datasheet - Page 6

• Manufacturer Part Number: BSO612CVG
• Description: Complementary Mosfets 60v Small-signal-transistor
• Manufacturer: Infineon Technologies Corporation

Safe operating area (N-Ch.)
I
parameter : D = 0 , T
Transient thermal impedance (N-Ch.)
Z
parameter : D = t
D
thJC
K/W
= f ( V
10
10
10
10
10
10
10
10
10
10
A
-1
-2
-1
-2
2
1
0
= f ( t
2
1
0
10
10
BSO 612 CV
BSO 612 CV
-1
-5
DS
10
p
)
single pulse
)
-4
10
-3
p
10
10
/ T
0
-2
A
10
= 25 °C
-1
10
0
10
10
1
1
10
D = 0.50
Rev. 2.0
2
DC
V
0.20
0.10
0.05
0.02
0.01
V
t
t p = 45.0µs
p
DS
s
100 µs
1 ms
10 ms
10
10
2
4
Page 6
Safe operating area (P-Ch.)
I
parameter : D = 0 , T
Transient thermal impedance (P-Ch.)
Z
parameter : D = t
D
K/W
thJC
= f ( V
-10
-10
-10
-10
10
10
10
10
10
A
-1
-2
-1
-2
= f ( t
1
0
2
1
0
-10
10
BSO 612 CV
BSO 612 CV
-5
DS
-1
p
10
)
single pulse
)
-4
10
-3
p
-10
10
/ T
-2
0
A
10
= 25 °C
-1
10
0
BSO 612 CV G
-10
10
1
2006-08-25
1
10
D = 0.50
2
DC
V
0.20
0.10
0.05
0.02
0.01
V
t
t p = 200.0µs
p
DS
s
1 ms
10 ms
-10
10
4
2