BSO613SPVG Infineon Technologies Corporation, BSO613SPVG Datasheet - Page 4

• Manufacturer Part Number: BSO613SPVG
• Description: P-channel Mosfets Power-transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
Rev.1.3
DD
DD
DD
DD
A
A
GS
R
R
= 25 °C
= 25 °C
= -30 V, I
= -30 V, I
= -48 V, I
= -48 V, I
= -48 V, I
= -48 V , I
= 0 V, I
F
F
F =
= -3.44 A
= I
D
D
D
D
l
S
S
= -3.44 A
= -3.44 A
= -3.44 A, V
= -3.44 A
, d i
, d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
= 0 to -10 V
j
= 25 °C, unless otherwise specified
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
gs
gd
g
rr
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
-3.74
-0.87
typ.
typ.
1.6
10
20
56
38
-
-
BSO613SPV G
-3.44
-13.8
-1.16
max.
max.
2.4
15
30
84
57
2007-03-02
-
Unit
nC
V
Unit
A
V
ns
nC