CPH5611 Sanyo Semiconductor Corporation, CPH5611 Datasheet - Page 2

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CPH5611

Manufacturer Part Number
CPH5611
Description
Ultrahigh-speed Switching N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPH5611-TL
Manufacturer:
SANYO
Quantity:
51 000
Continued from preceding page.
Electrical Connection
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
160
140
120
100
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
0
0
I D =0.7A
0.1
5
Parameter
1.5A
0.2
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
1
4
0.3
R DS (on) -- V GS
2
I D -- V DS
0.4
4
3
Top view
0.5
0.6
6
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
Symbol
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
0.7
Qgs
Qgd
Qg
t r
t f
0.8
8
Ta=25 C
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4V, I D =3A
V DS =10V, V GS =4V, I D =3A
V DS =10V, V GS =4V, I D =3A
I S =3A, V GS =0
0.9
IT03490
IT04047
1.0
10
CPH5611
Switching Time Test Circuit
Conditions
140
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
--60
0
P.G
V DS =10V
4V
0V
PW=10 s
D.C. 1%
--40
0.2
V IN
--20
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
0.4
0
V IN
R DS (on) -- Ta
50
G
min
20
0.6
I D -- V GS
40
V DD =10V
0.8
Ratings
D
60
typ
0.85
0.85
0.84
S
280
8.8
60
38
13
35
35
25
1.0
I D =1.5A
R L =6.67
80
CPH5611
100
max
1.2
V OUT
1.2
120
No.7154-2/4
1.4
140
IT03491
IT04048
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
160
1.6

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