ECH8613 Sanyo Semiconductor Corporation, ECH8613 Datasheet

ECH8613

Manufacturer Part Number

ECH8613

Description

P-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.ECH8613.pdf (4 pages)

Current page: 1 of 4
Download datasheet (38Kb)

Ordering number : ENN7780

ECH8613

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : FF

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

•

Low ON-resistance.

High-speed switching.

2.5V drive.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

P-Channel Silicon MOSFET

High-Speed Switching Applications

Symbol

I DSS 1

I DSS 2

V GSS

V DSS

I GSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

P T

yfs

I D

PW 10 s, duty cycle 1%

Mounted on a ceramic board (900mm

I D =--1mA, V GS =0

V DS =- -4V, V GS =0

V DS =- -12V, V GS =0

V GS = 8V, V DS =0

V DS =- -6V, I D =--1mA

V DS =- -6V, I D =--2.5A

I D =--2A, V GS =- -5V

I D =--1A, V GS =- -4.5V

I D =--0.5A, V GS =- -2.5V

V DS =- -6V, f=1MHz

ECH8613

Conditions

0.8mm)1unit

0.8mm)

min

--0.4

--12

5.5

71504 TS IM TA-101131

Ratings

typ

Ratings

1165

320

265

9.3

--55 to +150

Continued on next page.

max

150

--1.4

--12

--40

1.3

1.5

--10

--5

--1

No.7780-1/4

Unit

Related parts for ECH8613

ECH8613 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8613 P-Channel Silicon MOSFET High-Speed Switching Applications Symbol Conditions ...

Page 2

... I S =--5A 0. Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 P.G Top view Ratings min typ max 12 340 100 130 9.5 2.1 1.4 0.83 Switching Time Test Circuit -- -- -- OUT PW= ECH8613 50 S Unit --1.5 V No.7780-2/4 ...

Page 3

... Drain Current Time -- I D 1000 100 (on --0.01 --0.1 Drain Current ECH8613 -- --6V --7 --6 --5 --4 -- --1.5V --2 --1 0 --0.8 --0.9 --1.0 0 IT07059 80 Ta= --60 --8 --10 IT07061 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2004. Specifications and information herein are subject to change without notice. ECH8613 --100 ...

Related keywords

ECH8613 datasheet
ECH8613 data sheet
ECH8613 pdf datasheet
ECH8613 component
ECH8613 part
ECH8613 distributor
ECH8613 RoHS
ECH8613 datasheet download