UPA1724 Renesas Electronics Corporation., UPA1724 Datasheet

UPA1724

Manufacturer Part Number

UPA1724

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1724.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

Transistor designed for power management

applications of notebook computers and so on.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

The PA1724 is N-Channel MOS Field Effect

2.5-V gate drive and low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

iss

PA1724G

G14048EJ1V0DS00 (1st edition)

January 2000 NS CP(K)

= 11.0 m

= 12.0 m

= 15.0 m

: C

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

iss

= 1850 pF TYP.

10 s, Duty Cycle

MAX. (V

Note1

= 25°C)

= 0 V)

= 4.5 V, I

= 4.0 V, I

= 2.5 V, I

Power SOP8

N-CHANNEL POWER MOS FET

PACKAGE

Note2

1 %

The mark

= 25°C, All terminals are connected.)

= 5.0 A)

INDUSTRIAL USE

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

SWITCHING

–55 to +150

x 2.2 mm

shows major revised points.

MOS FIELD EFFECT TRANSISTOR

150

±12

±10

±40

2.0

°C

PACKAGE DRAWING (Unit : mm)

5.37 MAX.

0.40

1.27

+0.10

–0.05

0.78 MAX.

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1,2,3

5,6,7,8

0.5 ±0.2

6.0 ±0.3

PA1724

4.4

; Source

; Gate

; Drain

Source

Drain

Body

Diode

0.8

0.10

1999, 2000

Related parts for UPA1724

UPA1724 Summary of contents

Page 1

DESCRIPTION The PA1724 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES 2.5-V gate drive and low on-resistance R = 11.0 m MAX. (V DS(on 12.0 m MAX. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

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UPA1724 Renesas Electronics Corporation., UPA1724 Datasheet

UPA1724

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UPA1724 Summary of contents

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