VN2210 Supertex, Inc., VN2210 Datasheet
VN2210
Manufacturer Part Number
VN2210
Description
N-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
1.VN2210.pdf
(4 pages)
Ordering Information
†
Features
Applications
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
MIL visual screening available
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
BV
100V
ISS
DSS
DGS
and fast switching speeds
/
R
(max)
0.35Ω
DS(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
BV
300°C
BV
± 20V
(min)
I
D(ON)
DGS
DSS
8A
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
VN2210N2
TO-39
Order Number / Package
Case: DRAIN
TO-39
D G S
VN2210N3
TO-92
TO-92
S G D
VN2210
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VN2210 Summary of contents
Page 1
... Package Options BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VN2210 TO-92 VN2210N3 TO-39 TO-92 Case: DRAIN ...
Page 2
... 5V Ω 10V %/° 10V 25V 0V 25V MHz V = 25V 10Ω GEN 0V 0V PULSE R gen INPUT VN2210 I DRM 8.0A 10.0A L OUTPUT D.U.T. ...
Page 3
... TO-39 (pulsed) 10 100 3 Saturation Characteristics (volts) DS Power Dissipation vs. Case Temperature 10 8 TO- TO- 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 0.001 0.01 0 (seconds) P VN2210 = 10V 10 150 10 ...
Page 4
... Variation with Temperature GS(th) DS(ON 10V, 4A DS(ON 10mA GS(th) - 100 T (°C) j Gate Drive Dynamic Characteristics 10V DS 6 900 40V DS 2 300 (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com VN2210 20 2.0 1.6 1.2 0.8 0.4 150 10 07/08/02 ...