BF997 NXP Semiconductors, BF997 Datasheet - Page 2

• Manufacturer Part Number: BF997
• Description: N-channel Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
PINNING
QUICK REFERENCE DATA
April 1991
V
I
P
T
C
C
F
SYMBOL
D
Y
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source
Integrated drain resistance to suppress oscillation in the
frequency range greater than 1 GHz.
UHF and VHF applications such as:
– UHF/VHF television tuners
– Professional communication equipment
Especially intended for use in pre-amplifiers in CATV
tuners with a large tuning range up to 500 MHz.
j
DS
tot
ig1-s
rs
N-channel dual-gate MOS-FET
fs
PIN
1
2
3
4
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
input capacitance at gate 1 f = 1 MHz; I
feedback capacitance
noise figure
SYMBOL
s, b
g
g
d
2
1
PARAMETER
source
drain
gate 2
gate 1
DESCRIPTION
up to T
f = 1 kHz; I
f = 1 MHz; I
f = 200 MHz; G
I
D
= 10 mA; V
amb
D
= 60 C
D
D
= 10 mA; V
= 10 mA; V
= 10 mA; V
DS
S
CONDITIONS
= 15 V; V
= 2 mS; B
2
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
handbook, halfpage
Marking code: MKp.
DS
DS
DS
Fig.1 Simplified outline (SOT143) and symbol.
Top view
G2-S
= 15 V; V
S
= 15 V; V
= 15 V; V
= B
= 4 V
Sopt
4
1
;
G2-S
G2-S
G2-S
= 4 V
3
2
= 4 V 2.5
= 4 V 25
18
1
TYP.
MAM039
Product specification
g
g
2
1
20
30
200
150
MAX.
BF997
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b
d