NE3509M04 Renesas Electronics Corporation., NE3509M04 Datasheet - Page 4

• Manufacturer Part Number: NE3509M04
• Description: L To S Band Low Noise Amplifier N-channel Hj-fet
• Manufacturer: Renesas Electronics Corporation.

4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
Remark The graphs indicate nominal characteristics.
0
f = 2.5 GHz, V
10
Drain Current I
DS
= 2 V
–10
–20
–30
–40
–50
–60
–70
–80
40
30
20
10
–25
0
20
D
(mA)
–20
OUTPUT POWER, IM
vs. INPUT POWER
P
30
out (2 tone)
G
NF
a
–15
min
IM
3 (L)
Input Power P
Data Sheet PG10608EJ01V0DS
40
–10
20
18
16
14
12
10
8
6
4
2
0
I
D
OIP
–5
3
= +25 dBm
in (2 tone)
3,
DRAIN CURRENT
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
IM
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
(dBm)
3 (H)
0
1.0
f = 2.5 GHz,
I
IIP
f = 2.5 GHz, I
D
= 10 mA (Non-RF)
3
= +7.5 dBm
5
Drain to Source Voltage V
1.5
V
D
10
DS
= 10 mA
=
2.0
2 V
NF
G
15
min
a
2.5
50
45
40
35
30
25
20
15
10
5
0
DS
3.0
(V)
NE3509M04
3.5
20
18
16
14
12
10
8
6
4
2
0