NP0H3A3 Panasonic Corporation of North America, NP0H3A3 Datasheet

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NP0H3A3

Manufacturer Part Number
NP0H3A3
Description
Silicon Pnp Epitaxial Planar Type Tr1 , Silicon Npn Epitaxial Planar Type Tr2
Manufacturer
Panasonic Corporation of North America
Datasheet
Composite Transistors
NP0H3A3
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
Publication date: August 2003
• SSS-Mini type 6-pin package, reduction of the mounting area and
• Maximum package height (0.4 mm) contributes to develop thinner
• UNR11A3 × UNR12A3
Tr1
Tr2
Overall
assembly cost by one half
equipments
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Parameter
*
Symbol
V
V
V
V
T
P
CBO
I
CBO
I
T
a
CEO
CEO
stg
C
C
T
j
= 25°C
−55 to +125
Rating
−50
−50
−80
125
125
50
50
80
SJJ00282AED
Unit
mW
mA
mA
°C
°C
V
V
V
V
Marking Symbol: 3C
Internal Connection
1: Emitter (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
Display at No.1 lead
6
1
(0.35) (0.35)
0.12
1.00
5
2
+0.03
-0.02
±0.05
4
3
Tr1
6
1
5
2
SSSMini6-F1 Package
Tr2
4
3
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
Unit: mm
0 to 0.02
1

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NP0H3A3 Summary of contents

Page 1

... Composite Transistors NP0H3A3 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For digital circuits ■ Features • SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost by one half • Maximum package height (0.4 mm) contributes to develop thinner equipments ■ ...

Page 2

... NP0H3A3 ■ Electrical Characteristics T • Tr1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level ...

Page 3

... C  −100 = − 25° −10 −1 −4 −8 −12 0 Input voltage V (V) IN SJJ00282AED NP0H3A3  250 = − 75° 25°C 200 −25°C 150 100 50 0 −1 −10 −100 Collector current I ...

Page 4

... NP0H3A3 Characteristics charts of Tr2  25° Collector-emitter voltage V CE  MHz = 25° Collector-base voltage V ...

Page 5

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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