QSZ2 ROHM Co. Ltd., QSZ2 Datasheet - Page 2

• Manufacturer Part Number: QSZ2
• Description: General Purpose Transistor
• Manufacturer: ROHM Co. Ltd.

Transistors
Tr1
Tr2
Tr1
Tr2
∗
∗
∗
∗
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
1
2
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗
1
2
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Single pulse Pw=1ms.
Each terminal mounted on a recommended land.
Mounted on a 25mm 25mm
Pulsed
Single pulse Pw=1ms.
Each terminal mounted on a recommended land.
Mounted on a 25mm 25mm
Parameter
Parameter
Parameter
Parameter
t
0.8mm ceramic substrate.
t
0.8mm ceramic substrate.
Symbol
Symbol
V
V
V
Tstg
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
I
CP
P
CBO
CEO
Tj
C
EBO
I
CP
C
C
C
Symbol
V
BV
BV
BV
Cob
Symbol
I
I
CE(sat)
h
V
BV
BV
CBO
EBO
BV
f
FE
Cob
CBO
CEO
EBO
T
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
−55 to +150
Limits
−55 to +150
1.25
500
150
Min.
1.5
−30
−30
270
0.9
30
30
−6
6
3
−
−
−
−
−
Limits
1.25
−1.5
−30
−30
500
0.9
150
−6
−3
Min.
270
30
30
6
−
−
−
−
−
−200
Typ.
280
13
−
−
−
−
−
−
W/Element
mW/Total
Typ.
W/Total
140
300
11
−
−
−
−
−
−
Unit
−100
−100
−370
Max.
°C
°C
680
V
V
V
A
A
W/Element
mW/Total
−
−
−
−
−
W/Total
Unit
°C
°C
Max.
V
V
V
A
A
100
100
350
680
∗
∗
∗
∗
−
−
−
−
−
MHz
1
2
3
3
Unit
mV
nA
nA
pF
V
V
V
−
∗
∗
∗
∗
1
2
3
3
MHz
Unit
mV
nA
nA
pF
V
V
V
I
I
I
V
V
I
V
V
V
−
C
C
E
C
CB
EB
CE
CE
CB
= −10µA
= −10µA
= −1mA
= −1mA, I
= −30V
= −6V
= −2V, I
= −2V, I
= −10V, I
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
=10µA
=1mA
=10µA
=1A, I
=30V
=6V
=2V, I
=2V, I
=10V, I
B
C
E
Conditions
= −50mA
=100mA, f=100MHz
= −100mA
E
=0mA, f=1MHz
B
=50mA
C
E
Conditions
=100mA
= −100mA, f=100MHz
E
=0A, f=1MHz
∗
∗
∗
∗
QSZ2
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