QSZ4 ROHM Co. Ltd., QSZ4 Datasheet - Page 2

• Manufacturer Part Number: QSZ4
• Description: General Purpose Transistor Isolated Transistor And Diode
• Manufacturer: ROHM Co. Ltd.

Transistors
Tr1
Tr 2
Tr1
Tr 2
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×
∗1 Single pulse, Pw=1ms.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 25×25×
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25°C)
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Parameter
Parameter
t
t
0.8mm ceramic substrate.
0.8mm ceramic substrate.
Symbol
Symbol
V
V
V
V
V
Tstg
V
Tstg
I
Pc
I
Pc
Tj
CBO
CEO
EBO
I
Tj
CP
CBO
CEO
EBO
I
CP
C
C
Symbol
Symbol
V
−55 to +150
V
BV
BV
BV
−55 to +150
BV
BV
BV
Cob
I
I
I
Cob
CE(sat)
I
CE(sat)
h
h
CBO
EBO
CBO
EBO
f
f
FE
FE
CBO
CEO
T
Limits
CBO
CEO
T
EBO
Limits
EBO
1.25
1.25
−30
−30
500
150
500
150
0.9
0.9
−6
−2
−4
30
30
6
2
4
Min.
Min.
270
−30
−30
270
30
30
−6
W/Element
6
−
−
−
−
−
W/Element
−
−
−
−
−
mW/Total
mW/Total
W/Total
W/Total
Unit
Unit
°C
°C
°C
°C
V
V
V
A
A
V
V
V
A
A
−180
Typ.
Typ.
280
180
280
20
20
−
−
−
−
−
−
−
−
−
−
−
−
∗1
∗2
∗3
∗3
∗1
∗2
∗3
∗3
Max.
Max.
−100
−100
−370
100
100
370
680
680
−
−
−
−
−
−
−
−
−
−
MHz
MHz
Unit
Unit
mV
mV
nA
nA
nA
nA
pF
pF
V
V
V
V
V
V
−
−
I
I
I
V
V
I
V
V
V
I
I
I
V
V
I
V
V
V
C
C
E
C
C
C
E
C
=10µA
CB
EB
CE
CE
CB
= −10µA
CB
EB
CE
CE
CB
=10µA
=1mA
=1.5A, I
= −10µA
= −1mA
= −1.5A, I
=30V
=6V
=2V, I
=2V, I
=10V, I
= −30V
= −6V
= −2V, I
= −2V, I
= −10V, I
B
C
E
Conditions
Conditions
=75mA
= −200mA, f=100MHz
=200mA
E
B
C
E
=0A, f=1MHz
= −75mA
=200mA, f=100MHz
= −200mA
E
=0A, f=1MHz
∗
Rev.A
∗
∗
∗
QSZ4
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