NUS6189MN ON Semiconductor, NUS6189MN Datasheet - Page 4

• Manufacturer Part Number: NUS6189MN
• Description: Low Profile Overvoltage Protection Ic With Integrated Mosfet
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using 0.25 inch sq pad size (Cu area = 0.37 in sq [1 oz] including traces).
3. V
4. Surface−mounted on FR4 board using 400 mm sq pad size, 4 oz Cu, P
MAXIMUM RATINGS
V
Gate2 Voltage to Ground
Control Pin to Ground
Shunt Voltage (OVP
Maximum Power Dissipation (T
Thermal Resistance, Junction-to-Air (Note 1)
Operating Case Temperature (Note 4)
Operating Ambient Temperature (P
Operating Junction Temperature (All Dice)
Thermal Resistance Junction−to−Case (Note 4)
Storage Temperature Range
Continuous Input Current (T
Gate-to-Source Voltage MOSFET1
Drain-to-Source Voltage MOSFET1
Drain-to-Source Voltage MOSFET2
Collector-Emitter Voltage BJT
Collector-Base Voltage BJT
Emitter-Base Voltage BJT
IN
Average q for chip, minimum copper
Maximum q for power device, minimum copper
Average q, for chip (Note 2)
Maximum q for power device (Note 1)
Average q for chip (Note 1)
Maximum q for power device (Note 1)
IN
to Ground
= 6.0 V, all power devices fully enhanced.
OUT
to Batt)
A
= 50°C, Notes 1 & 3)
A
= 50°C, Notes 1 & 3)
D
Rating
= 0.5 W, Note 1)
http://onsemi.com
4
D
< 800 mW.
Symbol
V
V
T
T
V
V
V
T
V
V
V
CNTRL
q
Y
I
V
V
Cmax
T
shunt
Jmax
P
max
Amb
CEO
CBO
EBO
GS1
DS1
DS2
J-A
stg
G2
IN
JC
D
-65 to 150
-0.3 to 30
-0.3 to 30
-0.3 to 13
Value
±8.0
−7.0
137
145
103
125
109
150
−12
−30
−20
−20
1.2
2.6
12
98
77
82
30
°C/W
°C/W
Unit
°C
°C
°C
°C
W
V
V
V
V
A
V
V
V
V
V
V