BD539 Bourns, Inc., BD539 Datasheet - Page 3

• Manufacturer Part Number: BD539
• Description: Npn Silicon Power Transistors
• Manufacturer: Bourns, Inc.

JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
R O D U C T
1000
100
10
0·01
V
t
p
CE
= 300 µs, duty cycle < 2%
= 4 V
TYPICAL DC CURRENT GAIN
COLLECTOR CURRENT
I
C
0·1
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
1·0
0·9
0·8
0·7
0·6
0·5
0·01
1·0
V
T
TYPICAL CHARACTERISTICS
C
CE
= 25°C
= 4 V
T
T
C
C
BASE-EMITTER VOLTAGE
= 25°C
= 80°C
TCS631AH
COLLECTOR CURRENT
I
C
0·1
- Collector Current - A
10
Figure 3.
vs
BD539, BD539A, BD539B, BD539C, BD539D
0·01
COLLECTOR-EMITTER SATURATION VOLTAGE
1·0
0·1
10
0·1
1·0
I
I
I
I
NPN SILICON POWER TRANSISTORS
C
C
C
C
= 100 mA
= 300 mA
= 1 A
= 3 A
TCS631AC
1·0
I
BASE CURRENT
B
- Base Current - mA
10
Figure 2.
vs
10
100
TCS631AB
1000
3