BCW67A Infineon Technologies Corporation, BCW67A Datasheet - Page 3

• Manufacturer Part Number: BCW67A
• Description: Pnp Silicon Af Transistors
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
I
I
I
I
I
I
I
I
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 100 µA, V
= 100 µA, V
= 100 µA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 100 mA, V
= 100 mA, V
= 100 mA, V
= 500 mA, V
= 500 mA, V
= 500 mA, V
= 4 V, I
= 32 V, I
= 45 V, I
= 32 V, I
= 45 V, I
C
C
E
E
B
B
E
E
E
E
= 0
CE
CE
CE
= 0 , BCW67
= 0 , BCW68
= 0
CE
CE
CE
= 0 , BCW67
= 0 , BCW68
= 0
= 0
= 0 , T
= 0 , T
CE
CE
CE
CE
CE
CE
1)
= 1 V, h
= 1 V, h
= 1 V, h
= 10 V, h
= 10 V, h
= 10 V, h
= 1 V, h
= 1 V, h
= 1 V, h
= 2 V, h
= 2 V, h
= 2 V, h
A
A
= 150 °C; BCW67
= 150 °C; BCW68
FE
FE
FE
FE
FE
FE
FE
FE
FE
FE
FE
FE
-grp.A/F
-grp.B/G
-grp.C/H
-grp.A/F
-grp.B/G
-grp.C/H
-grp.A/F
-grp.B/G
-grp.C/H
-grp.A/F
-grp.B/G
-grp.C/H
A
= 25°C, unless otherwise specified
3
Symbol
V
V
V
I
I
h
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
min.
120
180
100
160
250
100
35
50
80
75
35
60
32
45
45
60
5
-
-
-
-
-
Values
160
250
350
typ.
BCW67, BCW68
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
0.02
0.02
250
400
630
20
20
20
2007-04-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
nA
-