2PA1576 NXP Semiconductors, 2PA1576 Datasheet - Page 3

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2PA1576

Manufacturer Part Number
2PA1576
Description
Pnp General Purpose Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
7. Characteristics
9397 750 14081
Product data sheet
Table 6:
T
[1]
Symbol
I
I
h
V
C
f
CBO
EBO
T
amb
FE
CEsat
c
Pulse test: t
= 25 C; unless otherwise specified.
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation
voltage
collector
capacitance
transition
frequency
Characteristics
2PA1576Q
2PA1576R
2PA1576S
p
300 s;
Rev. 05 — 24 November 2004
0.02.
Conditions
I
I
T
I
I
I
I
I
V
I
V
f = 100 MHz
E
E
C
C
C
B
E
C
j
CB
CE
= 0 A; V
= 0 A; V
= 150 C
= 5 mA
= i
= 0 A; V
= 1 mA; V
= 50 mA;
= 2 mA;
= 12 V; f = 1 MHz
= 12 V;
e
= 0 A;
CB
CB
EB
= 30 V
= 30 V;
= 4 V
CE
= 6 V
[1]
Min
-
-
-
120
180
270
-
-
100
PNP general-purpose transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
-
-
-
-
-
-
2.5
-
2PA1576
Max
270
390
560
3.5
-
100
5
100
500
Unit
nA
nA
mV
pF
MHz
A
3 of 7

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