NSL12AW ON Semiconductor, NSL12AW Datasheet

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NSL12AW

Manufacturer Part Number
NSL12AW
Description
High Current Surface Mount Pnp Silicon Low Vce Sat Transistor For Battery Operated Applications
Manufacturer
ON Semiconductor
Datasheet

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NSL12AW
High Current Surface Mount
PNP Silicon Low V
Transistor for Battery
Operated Applications
Features
Benefits
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4, Minimum Pad, 1 oz Coverage
2. FR−4, 1 Pad, 1 oz Coverage
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
April, 2005 − Rev. 2
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current
Electrostatic Discharge
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Thermal Resistance,
Total Device Dissipation
Junction and Storage
High Current Capability (3 A)
High Power Handling (Up to 650 mW)
Low V
Small Size
Pb−Free Package is Available
High Specific Current and Power Capability Reduces Required PCB Area
Reduced Parasitic Losses Increases Battery Life
Semiconductor Components Industries, LLC, 2005
T
Derate above 25 C
Junction−to−Ambient
T
Derate above 25 C
Junction−to−Ambient
Junction−to−Lead 6
(Single Pulse < 10 sec.)
Temperature Range
A
A
= 25 C
= 25 C
Characteristic
CE(s)
Rating
(170 mV Typical @ 1 A)
− Peak
(T
A
= 25 C)
R
R
P
P
qJA
qJA
P
D
D
Symbol
Symbol
T
D
V
V
V
(Note 1)
(Note 2)
ESD
R
J
I
(Note 1)
(Note 2)
Single
CEO
CBO
EBO
, T
CM
I
qJL
C
stg
CE(sat)
−55 to +150
Max
−5.0
−2.0
−3.0
Max
−12
−12
450
275
650
192
105
HBM Class 3
3.6
5.2
1.4
MM Class C
1
mW/ C
mW/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
mW
mW
C/W
C/W
C/W
W
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
PNP TRANSISTOR
1
BASE
MARKING DIAGRAM
M
G
http://onsemi.com
3
12 VOLTS
3.0 AMPS
6
1
COLLECTOR
EMITTER
= Date Code
= Pb−Free Package
1, 2, 5, 6
11
Publication Order Number:
SC−88/SOT−363
G
M
4
CASE 419B
STYLE 20
NSL12AW/D

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NSL12AW Summary of contents

Page 1

... BASE 4 EMITTER CASE 419B SC−88/SOT−363 STYLE 20 1 MARKING DIAGRAM Date Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: NSL12AW/D ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.5 0.4 0.3 0.2 800 mA 0 100 mA 500 BASE CURRENT (mA) B Figure 1. Collector Emitter Voltage vs Base Current NSL12AW ( unless otherwise noted) J Symbol = −10 mAdc (BR)CEO = −0.1 mAdc (BR)CBO = ...

Page 3

... Current 1.0 0.9 I 0.8 0.7 0.6 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 5. Base Emitter Saturation Voltage versus Base Current 0. 0. 0. 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 NSL12AW − 0.8 0 0.6 0.5 125 C 0.4 0.3 1 0.001 Figure 4. Base Emitter Voltage versus 100 ...

Page 4

... E 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 BSC 0.026 BSC L 0.10 0.20 0.30 0.004 0.008 0.012 2.00 2.10 2.20 0.078 0.082 0.086 E PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR 0.65 0.025 0.65 0.025 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NSL12AW/D ...

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