BF723 NXP Semiconductors, BF723 Datasheet - Page 3

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BF723

Manufacturer Part Number
BF723
Description
Pnp High-voltage Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 Apr 21
R
R
I
I
h
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
th j-s
= 25 C unless otherwise specified.
re
PNP high-voltage transistor
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
c
= 0; V
3
CB
CB
EB
= 200 V
= 200 V; T
= 5 V
CE
CONDITIONS
B
CE
CE
= 30 V; f = 1 MHz
note 1
note 1
= 5 mA
= 20 V
= 10 V; f = 100 MHz 60
CONDITIONS
j
= 150 C
MIN.
50
VALUE
106
25
Product specification
2.5
MAX.
10
10
50
0.6
BF723
2
.
UNIT
K/W
K/W
nA
nA
V
pF
MHz
UNIT
A

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