MJF18006 Inchange Semiconductor Company, MJF18006 Datasheet
MJF18006
Manufacturer Part Number
MJF18006
Description
Silicon Npn Power Transistors
Manufacturer
Inchange Semiconductor Company
Datasheet
1.MJF18006.pdf
(3 pages)
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Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High voltage ,high speed
APPLICATIONS
・Designed for use in 220V line-operated
PINNING
Absolute maximum ratings(Tc=25
THERMAL CHARACTERISTICS
SYMBOL
SYMBOL
switchmode power supplies and electronic
light ballasts
R
R
V
V
V
PIN
T
I
I
P
th j-C
th j-A
CBO
CEO
EBO
I
CM
I
BM
T
1
2
3
C
stg
B
D
j
Base
Collector
Emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Thermal resistance junction to case
Thermal resistance junction to ambient
DESCRIPTION
PARAMETER
℃
)
PARAMETER
Open emitter
Open base
Open collector
T
C
=25℃
Fig.1 simplified outline (TO-220F) and symbol
CONDITIONS
Product Specification
-65~150
VALUE
MJF18006
1000
MAX
3.12
62.5
450
150
15
40
9
6
4
8
UNIT
UNIT
℃/W
℃/W
W
℃
℃
V
V
V
A
A
A
A
・
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MJF18006 Summary of contents
Page 1
... SYMBOL R Thermal resistance junction to case th j-C R Thermal resistance junction to ambient th j-A Fig.1 simplified outline (TO-220F) and symbol ℃ ) CONDITIONS Open emitter Open base Open collector T =25℃ C PARAMETER Product Specification MJF18006 ・ VALUE UNIT 1000 V 450 ℃ ...
Page 2
... I =10mA ; V = =0. =10V;f=1.0MHz =10V;f=1.0MHz =300V ,I = =0.6A; I =1. =300V ,I =1. =0.13A; I =0.65A Product Specification MJF18006 MIN TYP. MAX UNIT 450 V 0.6 V 0.65 0.7 V 0.8 1.2 V 1.3 V 0.1 mA 0.5 0.1 0 MHz 180 ns μs 1 ...
Page 3
... Inchange Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Product Specification MJF18006 ...