MJW16206 Inchange Semiconductor Company, MJW16206 Datasheet - Page 2
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MJW16206
Manufacturer Part Number
MJW16206
Description
Silicon Npn Power Transistors
Manufacturer
Inchange Semiconductor Company
Datasheet
1.MJW16206.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
V
V
V
CEO(SUS)
V
(BR)EBO
h
h
h
CEsat-1
CEsat-2
I
C
I
BEsat
CES
EBO
FE-1
FE-2
FE-3
f
OB
T
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector outoput capacitance
PARAMETER
I
I
I
I
I
V
V
V
I
I
I
I
I
C
E
C
C
C
C
C
C
C
E
CE
CE
EB
=1.0mA; I
=0; f=100kHz ; V
=10mA; I
=3A ;I
=6.5A ;I
=6.5A ;I
=1A ; V
=10A ; V
=12A ; V
=0.5A ; V
=1200V,V
=850V,V
=8V; I
B
2
CONDITIONS
=0.4A
CE
C
B
B
CE
CE
=1.5A
=1.5A
=0
B
CE
=5V
C
=0
BE
=0
=5V
=5V
=10V;f=1.0MHz
BE
=0
=0
CB
=10V
MIN
500
8
5
3
Product Specification
TYP.
MJW16206
3.0
24
MAX
350
1.0
1.0
1.5
25
13
250
25
UNIT
MHz
μA
μA
pF
V
V
V
V
V