MJ410 Inchange Semiconductor Company, MJ410 Datasheet

MJ410

Manufacturer Part Number

MJ410

Description

Isc Silicon Npn Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.MJ410.pdf (2 pages)

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INCHANGE Semiconductor

isc

DESCRIPTION

·High Collector-Emitter Sustaining Voltage-

·Low Collector Saturation Voltage-

APPLICATIONS

·Designed for medium to high voltage inverters, converters,

ABSOLUTE MAXIMUM RATINGS(T

THERMAL CHARACTERISTICS

isc Website：www.iscsemi.cn

SYMBOL

: V

regulators and switching circuits.

CBO

CEO

EBO

th j-c

CEO(SUS)

CE(sat

stg

Silicon NPN Power Transistor

)= 0.8V(Max)@ I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation@T

Junction Temperature

Storage Temperature Range

= 200V(Min.)

Thermal Resistance,Junction to Case

PARAMETER

= 1A

=25

=25℃

℃)

-65~200

VALUE

MAX

0.75

200

100

150

UNIT

℃/W

℃

isc

Product Specification

MJ410

Related parts for MJ410

MJ410 Summary of contents

Page 1

... Junction Temperature J Storage Temperature Range T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 200 V 200 =25℃ 100 W C ℃ 150 ℃ -65~200 MAX UNIT ℃/W 0.75 isc Product Specification MJ410 ...

Page 2

... CONDITIONS I = 100mA 200V 200V;V =1.5V;T =125℃ CB EB(off 5V 1A 2.5A 0.2A; V =10V; f=1.0MHz C CE MJ410 MIN TYP MAX UNIT 200 V 0.8 V 1.2 V 0.25 mA 0 2.5 MHz ...

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