FJAF6910 Fairchild Semiconductor, FJAF6910 Datasheet
FJAF6910
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FJAF6910 Summary of contents
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... Base-Emitter Saturation Voltage Storage Time STG t * Fall Time F * Pulse Test: PW=20 s, duty Cycle=1% Pulsed Thermal Characteristics Symbol R Thermal Resistance, Junction to Case jC ©2001 Fairchild Semiconductor Corporation FJAF6910 = 1700V CBO T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Conditions V =1400V ...
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... I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 125 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 100 125 100m 10m 10 0 ...
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... COLLECTOR-EMITTER VOLTAGE CE Figure 9. Reverse Bias Safe Operating Area C], CASE TEMPERATURE C Figure 11. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued 0.1 0. Figure 8. Resistive Load Switching Time 100 15A 30V 200 (off ...
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... Package Demensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 0.85 0.03 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters Rev. A, July 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...