BUJ303AX NXP Semiconductors, BUJ303AX Datasheet - Page 5

• Manufacturer Part Number: BUJ303AX
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
September 1998
Silicon Diffused Power Transistor
Fig.14. Reverse bias safe operating area. T
Fig.13. Test circuit for reverse bias safe operating
V
cl
-VBB
IC/V
11
10
IBon
9
8
7
6
5
4
3
2
1
0
1000V; V
0
200
cc
= 150V; V
400
VCE CLAMP/V
LB
200 H
area.
600
BB
= -5V; L
800
LC
VCC
1,000
B
T.U.T.
= 1 H;L
1,200
VCL
j
T
c
j max
=
5
Fig.15. Forward bias safe operating area. T
0.01
(1)
(2)
I
II
III
NB:
100
0.1
10
1
1
IC / A
ICM max
IC max
P
Second breakdown limits.
Region of permissible DC operation.
Extension for repetitive pulse operation.
Extension during turn-on in single
transistor converters provided that
R
Mounted with heatsink compound and
30
envelope.
tot
BE
max and P
5 newton force on the centre of the
100
10
(1)
I
and t
= 0.01
tot
peak max lines.
100
p
(2)
II
0.6 s.
Product specification
V
CE
/ V
BUJ303AX
III
1000
tp =
100 us
1 ms
DC
10 ms
500 ms
hs
Rev 1.000
10 us
25 ˚C