PXT5551 DC COMPONENTS CO., LTD., PXT5551 Datasheet
PXT5551
Manufacturer Part Number
PXT5551
Description
Npn Epitaxial Planar Transistor
Manufacturer
DC COMPONENTS CO., LTD.
Datasheet
1.PXT5551.pdf
(1 pages)
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
1 = Base
2 = Collector
3 = Emitter
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Designed for general purpose applications requiring
high breakdown voltages.
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
(1)
(1)
(T
Symbol
V
V
V
T
A
P
=25
CBO
CEO
EBO
T
STG
I
C
D
J
V
V
Symbol
V
V
BV
BV
BV
o
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
I
I
h
h
h
C)
C
CBO
EBO
FE1
FE2
FE3
f
CBO
CEO
EBO
T
ob
-55 to +150
Rating
+150
180
160
500
1.2
6
Min
180
160
100
80
80
30
6
-
-
-
-
-
-
-
Typ
Unit
mA
o
o
W
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
C
C
Max
0.15
250
300
.167(4.25)
.159(4.05)
.020(0.51)
.014(0.36)
0.2
50
50
1
1
6
-
-
-
-
-
MHz
Unit
nA
nA
pF
V
V
V
V
V
V
V
-
-
-
Dimensions in inches and (millimeters)
1
.066(1.70)
.059(1.50)
.120(3.04)
.181(4.60)
.173(4.40)
.117(2.96)
I
I
I
V
V
I
I
I
I
I
I
I
V
V
C
C
E
C
C
C
C
C
C
C
CB
EB
CE
CB
=10 A
=100 A
=1mA
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=1mA, V
=10mA, V
=50mA, V
2
.060(1.52)
.058(1.48)
=4V
=120V
=10V, f=100MHz, I
=10V, f=1MHz
Test Conditions
3
CE
B
B
B
B
CE
CE
=1mA
=5mA
=1mA
=5mA
=5V
DXT5551
=5V
=5V
.102(2.60)
.095(2.40)
C
.016(0.41)
.014(0.35)
=10mA
SOT-89
.063(1.60)
.055(1.40)