FJC1963 Fairchild Semiconductor, FJC1963 Datasheet - Page 3

• Manufacturer Part Number: FJC1963
• Description: Fjc1963 Npn Epitaxial Silicon Transistor
• Manufacturer: Fairchild Semiconductor

FJC1963 Rev. B1
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 3. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
1400
1200
1000
800
600
400
200
100m
10m
0
1m
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
1
10m
0.0
2
0.2
V
CE
V
BE
Ta = 25
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[V], BASE-EMITTER VOLTAGE
[A], COLLECTOR CURRENT
0.4
4
100m
125
o
C
o
C
Ta = 125
0.6
6
25
o
Ta = - 40
C
o
C
0.8
8
o
- 40
C
1
o
1.0
C
10
V
I
I
I
I
I
I
I
I
B
B
B
B
B
C
CE
B
B
1.2
= 7mA
= 4mA
= 3mA
= 2mA
= 1mA
= 10I
= 6mA
= 5mA
12
= 2V
B
1.4
10
14
3
Figure 2. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage
Figure 6. Power Derating
1000
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
10
100m
10m
0
10
1
10m
Ta = - 40
25
Ta = 125
Ta = 25
Ta = - 40
Ta = 125
T
I
o
a
C
C
I
C
50
[
[A], COLLECTOR CURRENT
o
o
[A], COLLECTOR CURRENT
o
C], AMIBIENT TEMPERATURE
C
100m
C
o
o
C
C
100m
75
Ta = 25
100
o
C
1
1
125
V
I
C
CE
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150
= 10I
= 2V
B
10
175
10