FJC1308 Fairchild Semiconductor, FJC1308 Datasheet - Page 3

• Manufacturer Part Number: FJC1308
• Description: Fjc1308 Pnp Epitaxial Silicon Transistor
• Manufacturer: Fairchild Semiconductor

FJC1308 Rev. B1
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 3. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
-1400
-1200
-1000
-800
-600
-400
-200
-100m
-10m
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-1m
0
-10
-1
0
-0.0
-1m
-2
-0.2
V
CE
V
[V], COLLECTOR-EMITTER VOLTAGE
BE
-10m
I
-4
C
[V], BASE-EMITTER VOLTAGE
[A], COLLECTOR CURRENT
-0.4
125
Ta = 25
°
C
-6
-0.6
25
°
C
-100m
°
Ta = 125
C
-8
-0.8
Ta = - 40
°
-10
C
- 40
°
-1.0
C
°
-12
-1
C
V
I
I
I
I
I
I
I
B
B
I
CE
B
B
B
B
B
C
-1.2
= -7mA
= -6mA
= -5mA
= -3mA
= -2mA
= -1mA
= -4mA
= 10 I
= - 2V
-14
B
-1.4
-10
-16
3
Figure 2. DC Current Gain
Figure 4. Base-Emitter Saturation Voltage
Figure 6. Power Derating
1000
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
-0.1
10
-10
-10m
-1
0
-1m
Ta = - 40
Ta = 125
25
Ta = 25
Ta = 125
Ta = - 40
T
I
a
C
-10m
I
°
C
°
C
[
C
[A], COLLECTOR CURRENT
°
50
[A], COLLECTOR CURRENT
C], AMIBIENT TEMPERATURE
°
-100m
C
°
°
C
C
Ta = 25
75
-100m
°
C
100
-1
125
-1
V
I
CE
C
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= 10 I
150
= - 2V
B
-10
-10
175