FJT44TF-NL Fairchild Semiconductor, FJT44TF-NL Datasheet
FJT44TF-NL
Manufacturer Part Number
FJT44TF-NL
Description
Npn Epitaxial Silicon Transistor High Voltage Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJT44TF-NL.pdf
(5 pages)
©2006 Fairchild Semiconductor Corporation
FJT44 Rev. B
FJT44
NPN Epitaxial Silicon Transistor
•
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm
Electrical Characteristics*
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V
V
V
I
P
T
T
R
BV
BV
BV
I
I
I
h
V
V
C
C
CBO
CES
EBO
J
STG
FE
CBO
CEO
EBO
C
CE(sat)
BE(sat)
θJA
obo
High Voltage Transistor
Symbol
CBO
CEO
EBO
Symbol
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Parameter
Parameter
Parameter
T
a
=25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
T
(Ta = 25
a
=25°C unless otherwise noted
o
C)
I
I
I
V
V
V
V
V
V
V
I
I
I
I
V
C
C
E
C
C
C
C
CB
CE
CE
CE
CE
CE
CE
CB
= 100µA, I
= 100uA, I
= 1mA, I
= 1mA, I
= 10mA, I
= 50mA, I
= 10mA, I
=10V, I
=10V, I
=10V, I
=10V, I
= 400V I
= 400V, V
= 4V, I
= 20V, I
Test Conditions
1
C
C
C
C
C
B
B
=1mA
=10mA
=50mA
=100mA
B
B
B
E
= 0.1mA
E
= 0
E
= 0
C
= 1mA
= 5mA
= 1mA
= 0, f = 1MHz
BE
= 0
= 0
= 0
= 0
2
- 55 ~ +150
Value
Value
Min.
62.5
500
400
300
150
500
400
40
50
45
40
6
2
6
1. Base 2. Collector 3. Emitter
Typ.
September 2006
Max.
0.75
0.75
100
500
100
200
1
0.4
0.5
7
www.fairchildsemi.com
SOT-223
2
Units
Units
°C/W
mA
°C
°C
W
V
V
V
Units
3
nA
nA
nA
pF
V
V
V
V
V
V
V
tm
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FJT44TF-NL Summary of contents
Page 1
... FE V Collector-Emitter Saturation Voltage CE(sat) V Base-Emitter Saturation Voltage BE(sat) C Output Capacitance obo * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2006 Fairchild Semiconductor Corporation FJT44 Rev =25°C unless otherwise noted a Parameter o ( =25°C unless otherwise noted ...
Page 2
Typical Performance Characteristics 160 140 120 100 -20 - 100 I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 100 [mA], COLLECTOR CURRENT C Figure 3. ...
Page 3
Typical Performance Characteristics 100 10 1 0.1 0 [mA], COLLECTOR CURRENT C Figure 1. High Frequency Current Gain FJT44 Rev =10V CE f=10MHz 100 1000 3 www.fairchildsemi.com ...
Page 4
Mechanical Dimensions (0.95) FJT44 Rev. B SOT-223 3.00 ±0.10 MAX1.80 2.30 TYP 0.70 ±0.10 (0.95) ±0.25 0.25 4.60 ±0.20 6.50 4 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...